Zobrazeno 1 - 3
of 3
pro vyhledávání: '"U. Hassan, J."'
Autor:
Widmann, M., Niethammer, M., Y. Fedyanin, D., A. Khramtsov, I., Rendler, T., D. Booker, I., U Hassan, J., Morioka, N., Y.-C., Chen, G. Ivanov, I., T. Son, N., Ohshima, Takeshi, Bockstedte, M., Gali, A., Bonato, C., S.-Y., Lee, Jörg, Wrachtrup, Takeshi, Ohshima
Publikováno v:
Nano Letters. 19(10):7173-7180
We investigate charge state manipulation of silicon vacancies in silicon carbide, which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::4747258276944692c8c5830d7dcd28df
https://repo.qst.go.jp/records/77645
https://repo.qst.go.jp/records/77645
Autor:
Nagy, R., Niethammer, M., Widmann, M., Y., -C. Chen, Udvarhelyi, P., Bonato, C., U. Hassan, J., Karhu, R., G. Ivanov, I., T. Son, N., R. Maze, J., Ohshima, Takeshi, O. Soykal, O., Gali, A., S.-Y., Lee, Kaiser, F., Wrachtrup, J.
Publikováno v:
Nature Communications. 10:1954-1954-8
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::5ed1f8b288d16f71f736413e22db0074
https://repo.qst.go.jp/records/76002
https://repo.qst.go.jp/records/76002
Publikováno v:
Journal of Physics: Condensed Matter. 31:195501
The negative silicon vacancy (Vsi ) in SiC has recently emerged as a promising defect for quantum technologies. However, its electronic structure has not yet fully characterized. Although the isolated Si vacancy might be only two paramagnetic centers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::278551e1f2ffcee17c5efa9ce59b23cb
https://repo.qst.go.jp/records/74877
https://repo.qst.go.jp/records/74877