Zobrazeno 1 - 10
of 72
pro vyhledávání: '"U. Haak"'
Autor:
Joachim Bauer, Jürgen Drews, K. Schulz, Jens Katzer, W. Hoppner, U. Haak, P. Kulse, K. E. Ehwald, Mario Birkholz, D. Wolansky
Publikováno v:
Microelectronic Engineering. 97:276-279
A fabrication process of ultrathin TiN micro-electromechanical systems (MEMS) actuators intended for applications in electrostatic actuator schemes is presented. It includes the preparation of the TiN layer from the back end of line (BEOL) module of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a00f668a617e7a9c66f079228f8a48
https://doi.org/10.1016/j.mee.2012.04.017
https://doi.org/10.1016/j.mee.2012.04.017
Autor:
R. Scholz, M. Marschmeyer, D. Knoll, Thomas Grabolla, Johannes Borngraber, R. Barth, H.-E. Wulf, Bernd Heinemann, Peter Schley, Rainer Kurps, B. Kuck, K.E. Ehwald, D. Wolansky, Holger Rucker, W. Hoppner, U. Haak, D. Bolze, Bernd Tillack, H.H. Richter, J. Drews, D. Krüger, J. Bauer, Peter Zaumseil, Wolfgang Winkler, D. Schmidt, Yuji Yamamoto
Publikováno v:
Applied Surface Science. 224:297-305
Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 μm CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1058580c2d9493015f1bd2fc9d70a48
https://doi.org/10.1016/j.apsusc.2003.08.058
https://doi.org/10.1016/j.apsusc.2003.08.058
Publikováno v:
Chemoecology. 7:85-93
By means of gas chromatography, gas chromatographic coupled mass spectrometry, trail-following experiments and electrophysiological recordings from worker antennae, the major trail pheromone components from the hindgut of the formicine speciesCampono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe36e8494c82639c9e972c6d207b1362
https://doi.org/10.1007/bf01239485
https://doi.org/10.1007/bf01239485
Publikováno v:
Monthly Weather Review. 123:578-581
Murakami's recursive filter technique is suitable for computing storm tracks with reduced needs in data length, and it decreases computing time by the factor 3.5. It is shown that the storm tracks differ only slightly from the ones obtained using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5ae32ff28edba71c10d50022247384
https://doi.org/10.1175/1520-0493(1995)123<0578:fdotiv>2.0.co
https://doi.org/10.1175/1520-0493(1995)123<0578:fdotiv>2.0.co
Autor:
K. Schulz, W. Hoppner, A. Scheit, Joachim Bauer, D. Wolansky, Jens Katzer, H. Rucker, U. Haak, Andreas Mai, P. Kulse
Publikováno v:
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).
A methodology for fast detection of via faults is presented. Defective vias in large via chains are detected by subsequent use of a parametric tester for resistance measurements, a CD-SEM for voltage contrast inspection and defect localization, and f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6808172216dbae548fa851ab018d52aa
https://doi.org/10.1109/iscdg.2012.6360019
https://doi.org/10.1109/iscdg.2012.6360019
Autor:
S. Marschmeyer, Jürgen Bruns, Ivano Giuntoni, Joachim Bauer, Bernd Tillack, H. Richter, L. Zimmermann, U. Haak, Andrzej Gajda, Klaus Petermann, David Stolarek
Publikováno v:
SPIE Proceedings.
In this Paper we present a deep ultra-violet lithography (248nm) based double patterning technique for the fabrication of Bragg gratings on SOI rib waveguides. The principle of the used double patterning technique is presented, as well the influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d97a1215f67b9f868e2e80c076caba38
https://doi.org/10.1117/12.863538
https://doi.org/10.1117/12.863538
Autor:
Bernd Tillack, G. G. Fischer, D. Knoll, Peter Schley, J. Schmidt, Thomas Grabolla, A. Fox, D. Wolansky, K. Schulz, Wolfgang Winkler, J. Drews, Steffen Marschmeyer, Bernd Heinemann, Andreas Mai, J. Borngraber, D. Schmidt, Holger Rucker, U. Haak, Yuji Yamamoto, R. Barth, F. Korndorfer
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f T =50 GHz, f max =130 GHz, BV CEO =3.7 V) integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474e00a447847c69aebd4a52b99f3f2c
https://doi.org/10.1109/bipol.2009.5314251
https://doi.org/10.1109/bipol.2009.5314251
Autor:
B. Kuck, D. Wolansky, R. Barth, Peter Schley, D. Knoll, A. Fox, Bernd Heinemann, G. Weidner, Ch. Wipf, Steffen Marschmeyer, U. Haak, Bernd Tillack, Holger Rucker, D. Schmidt, R. Kurps, Harald H. Richter, D. Bolze, Yuji Yamamoto, J. Drews
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We present a double-polysilicon SiGe:C HBT module showing a CML ring oscillator (RO) gate delay tau of 2.5 ps, and fT/ fmax/BVCEo values of 300 GHz/350 GHz/1.85V. A key new feature of the HBT module is a connection of the extrinsic and intrinsic base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3795dab736d31bd67e912544cd85a679
https://doi.org/10.1109/iedm.2008.4796799
https://doi.org/10.1109/iedm.2008.4796799
Publikováno v:
SPIE Proceedings.
In this paper, we will present a new swing curve measurement and simulation method. Swing curve measurements were completed using a high NA KrF Scanner (Nikon S207D) where illumination and reflectance sensors were utilised to measure the reflectivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7286011dab0324656135444cb9ddad6
https://doi.org/10.1117/12.654748
https://doi.org/10.1117/12.654748
Autor:
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, Th. Grabolla, U. Haak, W. Hoppner, D. Knoll, K. Kopke, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, H. Rucker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto
Publikováno v:
Scopus-Elsevier
We present a new collector construction for high-speed SiGe:C HBTs that substantially reduces the parasitic base-collector capacitance by selectively underetching of the collector region. The impact of the collector module on RF performance is demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c9b1e38d53574c8c183bca71c2a617b
https://doi.org/10.1109/iedm.2004.1419123
https://doi.org/10.1109/iedm.2004.1419123