Zobrazeno 1 - 10
of 1 016
pro vyhledávání: '"U. Gösele"'
Publikováno v:
Journal of Electronic Materials. 39:2177-2189
Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a0f9d1e9dd6e116b8b955c81a6cebd
https://doi.org/10.1007/s11664-010-1334-x
https://doi.org/10.1007/s11664-010-1334-x
Publikováno v:
physica status solidi c. 7:444-447
Zinc oxide (0001) bulk crystals were implanted by 100 keV H2+ ions with various fluences in the range of 5×1016 to 3×1017 cm–2. Surface layer exfoliation was observed in the case of samples that were implanted with fluence higher than 2.5×1017 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74e01f4d81f1b75973fd89428e3105fa
https://doi.org/10.1002/pssc.200982427
https://doi.org/10.1002/pssc.200982427
Autor:
Seref Kalem, T.K. Nguyen-Duc, U. Gösele, Peter Werner, W. Erfurth, Manfred Reiche, P. Das Kanungo, Nadine Geyer, Horst Blumtritt, Nikolai Zakharov, A. Wolfsteller
Publikováno v:
Thin Solid Films. 518:2555-2561
Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b56e8f421d20f6ec8108d372bf79e5
https://doi.org/10.1016/j.tsf.2009.08.021
https://doi.org/10.1016/j.tsf.2009.08.021
Publikováno v:
physica status solidi c. 7:44-47
We present an overview of the implantation-induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0435f28b8df4a2013a81e39193246753
https://doi.org/10.1002/pssc.200982630
https://doi.org/10.1002/pssc.200982630
Publikováno v:
physica status solidi (a). 207:29-32
Hydrogen ion implantation in aluminium nitride (AlN) epitaxial layers grown on 2-inch c-plane (0001) sapphire substrates was performed with different fluences in the range of 1 × 10 17 ―2 × 10 17 /cm 2 at various implantation temperatures between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa5d464b49abfadab49f422394a19c4
https://doi.org/10.1002/pssa.200982605
https://doi.org/10.1002/pssa.200982605
Publikováno v:
Crystal Research and Technology. 44:1095-1100
The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2fe4f2c6d1fe1ab7a93a78544da7384
https://doi.org/10.1002/crat.200900467
https://doi.org/10.1002/crat.200900467
Autor:
Damiana Lerose, Andrea Steinbrück, Th. Stelzner, U. Gösele, Andreas Berger, Michael Becker, Silke Christiansen, Jinquan Liu
Publikováno v:
ChemPhysChem. 10:1219-1224
Gold caps on silicon nanowires are selectively coated with silver by autometallography (electroless deposition). Changing the conditions of silver deposition, a variety of different coating morphologies can be produced [figure: see text]. The differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d45e0bb0e0e66d691e9db5b271ce8a4
https://doi.org/10.1002/cphc.200800809
https://doi.org/10.1002/cphc.200800809
Autor:
U. Gösele, Martin Chicoine, Oussama Moutanabbir, François Schiettekatte, Oliver Seitz, Yves J. Chabal, St. Senz, F. Süßkraut, Silke Christiansen, Reinhard Krause-Rehberg, R. Scholz
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1264-1268
The underlying physics and the role of H-defect interaction in H ion-induced splitting of GaN were investigated by transmission electron microscopy, high resolution X-ray diffraction, positron annihilation spectroscopy, ion channeling, elastic recoil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c8ddb3353e666c13a0fb626de71752
https://doi.org/10.1016/j.nimb.2009.01.028
https://doi.org/10.1016/j.nimb.2009.01.028
Publikováno v:
physica status solidi (a). 205:2683-2686
Aluminium nitride (AlN) epitaxial layers grown on sapphire were implanted with 100 keV hydrogen, H2+ ions with doses in the range of 5 × 1016 cm–2 to 2.5 × 1017 cm−2 and subsequently annealed at temperatures up to 800 °C in order to observe th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec03df8b6f290084f779311ddb2aead3
https://doi.org/10.1002/pssa.200824159
https://doi.org/10.1002/pssa.200824159
Publikováno v:
Applied Physics A. 93:399-403
An approach is presented which is capable of fabricating arbitrarily shaped three-dimensional microstructures. Two methods—namely, macroporous silicon and atomic layer deposition—are combined to realize structures in the micrometer and submicrome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a25e2edb64d81283b8899c2e7e00ff9
https://doi.org/10.1007/s00339-008-4784-8
https://doi.org/10.1007/s00339-008-4784-8