Zobrazeno 1 - 10
of 103
pro vyhledávání: '"U. Frotscher"'
Autor:
Ruediger Arens-Fischer, Gilles Lerondel, Markus Thönissen, W Theiß, U. Frotscher, Manja Krüger, P. Grosse, Hans Lüth, S Hillbrich, Sophie Billat, M. G. Berger
Publikováno v:
Thin Solid Films. 297:92-96
We have investigated changes in the etch rate of p-PS with increasing etching time as well as changes of the porosity of buried layers with depth. These effects can be attributed to the influence of chemical etching and variations in the electrolyte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aca6d98e458b633c7f9168f842e68640
https://doi.org/10.1016/s0040-6090(96)09420-5
https://doi.org/10.1016/s0040-6090(96)09420-5
Autor:
Michael Krüger, Markus Thönissen, U. Rossow, U. Frotscher, Hans Lüth, Sophie Billat, M. G. Berger
Publikováno v:
Journal of Applied Physics. 80:2990-2993
The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246890bbf54f601e5bfe3a91a5762b2a
https://doi.org/10.1063/1.363156
https://doi.org/10.1063/1.363156
Publikováno v:
Applied Surface Science. :552-556
In this paper we show that the lineshapes of the dielectric functions of porous p-doped silicon layers are strongly correlated to their original bulk doping concentrations. Features in the dielectric functions of layers formed from heavily doped bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f027956e42cb9b01096356319747264
https://doi.org/10.1016/s0169-4332(96)00201-2
https://doi.org/10.1016/s0169-4332(96)00201-2
Publikováno v:
Applied Surface Science. 102:413-416
The dielectric function of porous silicon layers depends strongly on the nanostructure of the silicon skeleton. In this paper we discuss the main effects, as determined from spectroscopic ellipsometric measurements of the dielectric functions of poro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab9e5d2454a4361f8b4d326968e05d7
https://doi.org/10.1016/0169-4332(96)00089-x
https://doi.org/10.1016/0169-4332(96)00089-x
Autor:
Ruediger Arens-Fischer, H. Münder, M. G. Berger, C. Pietryga, M Ebert, Wolfgang Richter, U. Frotscher, U. Rossow
Publikováno v:
Thin Solid Films. 276:36-39
In this paper we investigate the oxidation of porous silicon by O3, H2O2, and, for comparison, in normal air. Such an oxidation may serve as passivation for porous silicon in applications in order to prevent devices from degradation. The changes in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723db6aaef9e5a5cd8df1bba23bda8e0
https://doi.org/10.1016/0040-6090(95)08044-9
https://doi.org/10.1016/0040-6090(95)08044-9
Autor:
U. Frotscher, H. Münder, Wolfgang Richter, M. G. Berger, Markus Thönissen, St. Frohnhoff, U. Rossow
Publikováno v:
Thin Solid Films. 255:5-8
The influence of various parameters of the electrochemical process on the resulting microstructure of porous silicon layers was studied by spectroscopic ellipsometry. The first parameter, the etching time, is known to determine the layer thickness. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3704fed31e826405c770c44b8ee01b
https://doi.org/10.1016/0040-6090(94)05676-5
https://doi.org/10.1016/0040-6090(94)05676-5
Publikováno v:
Surface Science. :597-602
The growth of thin Sb layers on GaAs(100) was studied in ultra high vacuum by means of Raman scattering and spectroscopic ellipsometry. Clean (100) surfaces were prepared by heating As-passivated MBE-grown GaAs substrates. The Raman spectra taken aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ece4168c8418b5d6c0e6e23c87c7b5ed
https://doi.org/10.1016/0039-6028(94)90460-x
https://doi.org/10.1016/0039-6028(94)90460-x
Autor:
R. Herino, U. Rossow, H. Münder, M. Ligeon, Hans Lüth, U. Frotscher, M. G. Berger, Wolfgang Richter
Publikováno v:
Applied Surface Science. 63:57-61
Porous silicon films consist of a complicated network of crystals with diameters down to the nanometer range. In the smallest crystals phonons and electrons are localized. From the Raman spectra the distributions of the nanocrystal diameters are esti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd92a46c121006993db52f4f83478d3
https://doi.org/10.1016/0169-4332(93)90064-i
https://doi.org/10.1016/0169-4332(93)90064-i
Publikováno v:
MRS Proceedings. 405
The dielectric function of porous silicon layers depends strongly on the electronic properties of the nanostructure of the silicon skeleton. In this paper we discuss the main effects, as determined from spectroscopic ellipsometric measurements of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b53ef520ca803aba048d624a66351f6
https://doi.org/10.1557/proc-405-209
https://doi.org/10.1557/proc-405-209