Zobrazeno 1 - 10
of 222
pro vyhledávání: '"U. Erben"'
Publikováno v:
Abstract- und Posterband – 90. Jahresversammlung der Deutschen Gesellschaft für HNO-Heilkunde, Kopf- und Hals-Chirurgie e.V., Bonn – Digitalisierung in der HNO-Heilkunde.
Publikováno v:
Abstract- und Posterband – 90. Jahresversammlung der Deutschen Gesellschaft für HNO-Heilkunde, Kopf- und Hals-Chirurgie e.V., Bonn – Digitalisierung in der HNO-Heilkunde.
Publikováno v:
Abstract- und Posterband – 90. Jahresversammlung der Deutschen Gesellschaft für HNO-Heilkunde, Kopf- und Hals-Chirurgie e.V., Bonn – Digitalisierung in der HNO-Heilkunde.
Publikováno v:
Abstract- und Posterband – 90. Jahresversammlung der Deutschen Gesellschaft für HNO-Heilkunde, Kopf- und Hals-Chirurgie e.V., Bonn – Digitalisierung in der HNO-Heilkunde.
Autor:
U. Erben, F.J. Beisswanger, J.-F. Luy, S. Bruce, M. Willander, Anders Rydberg, H. Schumacher, Magnus Karlsteen, M. Kim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:695-700
In this paper, the design of an active millimeter-wave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:712-715
Silicon circuits, now penetrating well into the microwave frequency range, use lossy silicon substrates. Consequently, the microwave performance of transmission lines on this substrate becomes increasingly important and has been investigated here up
Publikováno v:
Solid-State Electronics. 41:1485-1492
Si/SiGe heterojunction transistors with high germanium concentration in the base layer are capable of microwave noise figures below 1 dB at X-band frequencies, because of their low base resistance. We review critical device parameters which influence
Publikováno v:
Solid-State Electronics. 41:387-390
We present experimental and numerical results on high-frequency noise of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on small-signal analysis. The minimum noise figure for an SiGe HBT is determined from s -parameter measure
Publikováno v:
Solid-State Electronics. 39:377-384
A thermo-electrical model which analytically describes the current flow inside abrupt heterojunction bipolar transistors (HBTs) using thermionic diffusion theory was developed. This model calculates numerically the three-dimensional temperature distr
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:122-127
The consequence of the reciprocal relation between the temperature and current distributions in heterojunction bipolar transistors (HBTs) has been determined. The dc current voltage (I-V) characteristics, RF small-signal parameters, and temperature d