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pro vyhledávání: '"U. E. Avci"'
Autor:
D. Towner, C. Ryder, M. A. Blount, C. Auth, K. Sethi, J. R. Weber, Che-Yun Lin, U. E. Avci, A. J. Welsh, C. M. Pelto, A. Kundu, R. Grover, Rahim Kasim, D. Seghete, A. Schmitz, J. Hicks
Publikováno v:
IRPS
We present a high density MIM decoupling capacitor that enables improved microprocessor performance by providing robust on-chip power supply droop reduction. The MIM dielectric is fabricated using ALD-deposited HfO 2 -Al 2 O 3 and HfO 2 -ZrO 2 high-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb161d96fcf1b5e26d60236c1615071
https://doi.org/10.1109/irps45951.2020.9128312
https://doi.org/10.1109/irps45951.2020.9128312
