Zobrazeno 1 - 10
of 42
pro vyhledávání: '"U. Bussmann"'
Publikováno v:
Materials Science and Engineering: B. 12:37-40
The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ddf2f01365518e986ae6e977dbb809
https://doi.org/10.1016/0921-5107(92)90255-8
https://doi.org/10.1016/0921-5107(92)90255-8
Publikováno v:
Materials Science and Engineering: B. 12:73-76
During the past decade SIMOX (separation by implanted oxygen) has emerged as one of the leading SOI (silicon-on-insulator) technologies. The implantation involves such high doses that sputtering, swelling and the diffusion of excess oxygen within the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa62098567d277d37371048b1e8fd45
https://doi.org/10.1016/0921-5107(92)90262-8
https://doi.org/10.1016/0921-5107(92)90262-8
Publikováno v:
Journal of Applied Physics. 70:4584-4592
Separation by implanted oxygen is recognized as a versatile technology to produce silicon‐on‐insulator substrates. The lateral isolation of device islands is achieved by subsequent local oxidation or mesa etching of the silicon top layer. In an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03a7ac862a5706c0687116624890ce4
https://doi.org/10.1063/1.349095
https://doi.org/10.1063/1.349095
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:856-859
SIMOX (separation by implanted oxygen) is a recognized technology to produce silicon on insulator substrates. Laterally isolated device islands are formed by subsequent mesa etching or selective local oxidation of the silicon top layer. Alternatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92a4284dea3c960761ad7de4d91aa9d2
https://doi.org/10.1016/0168-583x(91)96293-t
https://doi.org/10.1016/0168-583x(91)96293-t
Autor:
C.D. Marsh, J. Vanhellemont, Karen J. Reeson, A.K. Robinson, P.L.F. Hemment, G.R. Booker, Y. Li, U. Bussmann, John A. Kilner
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:555-560
SIMOX (separation by implanted oxygen) is an established technique to produce device worthy silicon-on-insulator structures. Current interest in thin film fully depleted CMOS devices in SIMOX material has placed emphasis on producing silicon overlaye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af77411d7a8a9a8adc4658a1036270e
https://doi.org/10.1016/0168-583x(91)96229-e
https://doi.org/10.1016/0168-583x(91)96229-e
Autor:
A.K. Robinson, John F. Watts, J.E. Castle, J.P. Zhang, U. Bussmann, H.D. Liu, Terry E. Whall, A.R. Powell, P.L.F. Hemment, Evan H. C. Parker, S.M. Newstead
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:697-700
An attempt to implant a high dose (up to 1.8 × 1018 cm−2) O+ ions into a Si0.5Ge0.5 alloy grown by molecular beam epitaxy (MBE) was made in this work, and the oxidation of the alloy by the implantation before and after thermal treatment was studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c33d283301d69e18d81edd0fb07558
https://doi.org/10.1016/0168-583x(91)96260-r
https://doi.org/10.1016/0168-583x(91)96260-r
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:734-737
Buried silicon nitride layers can be synthesized by high dose nitrogen implantation into silicon. To investigate temperature effects, 200 keV N + implantations into silicon were performed with doses of 0.35 to 1.05 × 10 18 N + cm −2 . A first set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e637a84d45bb4bca83dc28779aa3b70
https://doi.org/10.1016/0168-583x(91)96268-p
https://doi.org/10.1016/0168-583x(91)96268-p
Autor:
U. Bussmann, P.L.F. Hemment
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 47:22-28
A fast computer programme has been developed to calculate high fluence oxygen distributions after implantation into unmasked silicon or through masking oxide layers. Using a TRIM-profile to represent the incremental fluence distribution, the oxygen r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d503bc976a13803b2b9cadcec1df10de
https://doi.org/10.1016/0168-583x(90)90042-s
https://doi.org/10.1016/0168-583x(90)90042-s
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c44743646863284d81ffaa6cb9709485
https://doi.org/10.1109/sossoi.1990.145714
https://doi.org/10.1109/sossoi.1990.145714
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:210-212
The computer program IRIS (Implantation of Reactive Ions into Silicon) has been modified and used to simulate low energy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cbbf855464d6390c195781bffc5b232
https://doi.org/10.1016/0168-583x(93)95045-7
https://doi.org/10.1016/0168-583x(93)95045-7