Zobrazeno 1 - 10
of 266
pro vyhledávání: '"U. Bussmann"'
Autor:
Jalali, Majid1, Abedi, Mehdi1 mehdi.abedi@modares.ac.ir, Memariani, Farshid2,3, Ghorbani, Abdolbaset4
Publikováno v:
Journal of Ethnobiology & Ethnomedicine. 10/4/2024, Vol. 20 Issue 1, p1-29. 29p.
Publikováno v:
Journal of Ethnobiology & Ethnomedicine. 8/10/2024, Vol. 20 Issue 1, p1-20. 20p.
Autor:
Hassan, Musheerul1,2, Mir, Tawseef Ahmad3,4,5, Jan, Muatasim3,4,5, Amjad, Muhammad Shoaib6,7 malikshoaib1165@yahoo.com, Aziz, Muhammad Abdul8,9, Pieroni, Andrea9,10, Vitasović-Kosić, Ivana11, Bussmann, Rainer W.1,12
Publikováno v:
Journal of Ethnobiology & Ethnomedicine. 7/13/2024, Vol. 20 Issue 1, p1-26. 26p.
Autor:
Amin, Muhammad1, Aziz, Muhammad Abdul2, Manduzai, Ajmal Khan1, Pieroni, Andrea3,4, Alkahtani, Jawaher5, AbdelGawwad, Mohamed Ragab6, Gafforov, Yusufjon7,8, Nazeer, Abdul1, Abbasi, Arshad Mehmood1,3 amabbasi@cuiatd.edu.pk
Publikováno v:
Journal of Ethnobiology & Ethnomedicine. 7/8/2024, Vol. 20 Issue 1, p1-31. 31p.
Autor:
Umair, Muhammad1,2 umairm@zjnu.edu.cn, Altaf, Muhammad3, Ahsan, Taswar4, Bussmann, Rainer W.5,6, Abbasi, Arshad Mehmood7 arshad799@yahoo.com, Gatasheh, Mansour K.8, Elrobh, Mohamed8
Publikováno v:
Journal of Ethnobiology & Ethnomedicine. 5/7/2024, Vol. 20, p1-29. 29p.
Autor:
Raza, Awais1, Hanif, Uzma1,2 uzmahanif@gcu.edu.pk, Ali, Shanza1, Ali, Baber3, Khan, Muhammad Nauman4,5 nomiflora@uop.edu.pk, Fatima, Mahreen6, Rafique, Sadia7, Rashid, Muhammad8, Sher, Malik Muhammad9, Ullah, Riaz10
Publikováno v:
Polish Journal of Environmental Studies. 2024, Vol. 33 Issue 3, p3367-3379. 13p.
Publikováno v:
Materials Science and Engineering: B. 12:37-40
The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ddf2f01365518e986ae6e977dbb809
https://doi.org/10.1016/0921-5107(92)90255-8
https://doi.org/10.1016/0921-5107(92)90255-8
Publikováno v:
Materials Science and Engineering: B. 12:73-76
During the past decade SIMOX (separation by implanted oxygen) has emerged as one of the leading SOI (silicon-on-insulator) technologies. The implantation involves such high doses that sputtering, swelling and the diffusion of excess oxygen within the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa62098567d277d37371048b1e8fd45
https://doi.org/10.1016/0921-5107(92)90262-8
https://doi.org/10.1016/0921-5107(92)90262-8
Publikováno v:
Journal of Applied Physics. 70:4584-4592
Separation by implanted oxygen is recognized as a versatile technology to produce silicon‐on‐insulator substrates. The lateral isolation of device islands is achieved by subsequent local oxidation or mesa etching of the silicon top layer. In an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03a7ac862a5706c0687116624890ce4
https://doi.org/10.1063/1.349095
https://doi.org/10.1063/1.349095
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:856-859
SIMOX (separation by implanted oxygen) is a recognized technology to produce silicon on insulator substrates. Laterally isolated device islands are formed by subsequent mesa etching or selective local oxidation of the silicon top layer. Alternatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92a4284dea3c960761ad7de4d91aa9d2
https://doi.org/10.1016/0168-583x(91)96293-t
https://doi.org/10.1016/0168-583x(91)96293-t