Zobrazeno 1 - 10
of 135
pro vyhledávání: '"U. Bockelmann"'
Publikováno v:
Scopus-Elsevier
Photoluminescence measurements with combined spatial, temporal, and spectral resolution are performed on single GaAs/${\mathrm{Ga}}_{\mathrm{x}}$${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum dots. The complete spatial quantization le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cdc895118fe56d54f44e613aadc0e74
https://doi.org/10.1103/physrevb.55.4456
https://doi.org/10.1103/physrevb.55.4456
Autor:
U. Bockelmann, W. Heller
Publikováno v:
Physical Review B. 55:R4871-R4874
We report on microphotoluminescence experiments in magnetic fields on single quantum dots formed by width fluctuations in a narrow GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum well. The ground state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1064b80f12aab62191337623de961e
https://doi.org/10.1103/physrevb.55.r4871
https://doi.org/10.1103/physrevb.55.r4871
Publikováno v:
Physical Review B. 55:2420-2428
The electron states of weakly-one-dimensional quantum wires are computed using the adiabatic approximation in the framework of the k . p theory and the envelope-function approximation. The computed transition rates of electrons from one confined stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5350eece1648959bb83f22822beffa3
https://doi.org/10.1103/physrevb.55.2420
https://doi.org/10.1103/physrevb.55.2420
Autor:
G. Böhm, Gert Schedelbeck, G. Weimann, E. Silveira, R. Strenz, U. Bockelmann, Gerhard Abstreiter
Publikováno v:
Surface Science. :783-787
Resonant inelastic light scattering was used to investigate both charge density excitations and spin density excitations in shallow etched GaAsAl/GaAs quantum wires. A semi-transparent Schottky gate was evaporated on top of the samples which allowed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6919506feb52d46bb88f4a7437323ff0
https://doi.org/10.1016/0039-6028(96)00533-x
https://doi.org/10.1016/0039-6028(96)00533-x
Publikováno v:
Solid-State Electronics. 40:541-544
We report on photoluminescence measurements with temporal and spatial resolution on a series of individual quantum dot structures. Excitation is performed resonantly with very small laser intensities corresponding to between 200 and 1 exciton per pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6737715c4a9fc206e6fbe937d7a3c6cf
https://doi.org/10.1016/0038-1101(95)00286-3
https://doi.org/10.1016/0038-1101(95)00286-3
Publikováno v:
Solid-State Electronics. 40:725-728
We have measured the diffusion of excitons in GaAs quantum wells by using spatial and time-resolved photoluminescence (PL) spectroscopy at liquid helium temperature. A displacement of the detected region (O 1.5 μm) with respect to the laser spot all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd85ee2225d742987e5cb1786893c27
https://doi.org/10.1016/0038-1101(95)00351-7
https://doi.org/10.1016/0038-1101(95)00351-7
Autor:
U. Bockelmann
Publikováno v:
Physical Review B. 50:17271-17279
Acoustic phonon scattering of electrons and excitons in fully quantized systems based on GaAs/${\mathrm{Ga}}_{\mathit{x}}$${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum wells is studied theoretically. We compare spatial quantization b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba0e35f4856449863761f1fb678057d3
https://doi.org/10.1103/physrevb.50.17271
https://doi.org/10.1103/physrevb.50.17271
Publikováno v:
Europhysics Letters (EPL). 28:501-506
We present investigations of the optical properties of quantum wire arrays grown on vicinal surfaces with lateral periods between 8 nm and 32 nm. Because of the decreasing tunnelling between adjacent wires when the lateral periodicity gets larger, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ee9d3bb10bc4162eafa5cc5fc4c971
https://doi.org/10.1209/0295-5075/28/7/008
https://doi.org/10.1209/0295-5075/28/7/008
Publikováno v:
Physical Review Letters. 73:3022-3025
Resonant inelastic light scattering is used to probe electronic excitations in shallow etched GaAs/AlGaAs quantum dots and wires. In both types of structures, intersubband excitations are observed in depolarized scattering geometries. They show signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a12a39c5a1582be631e027c6735efa4
https://doi.org/10.1103/physrevlett.73.3022
https://doi.org/10.1103/physrevlett.73.3022
Autor:
U Bockelmann
Publikováno v:
Semiconductor Science and Technology. 9:865-870
We report on theoretical investigations bearing on carrier relaxation among electronic states in III-V semiconductors. Electron scattering by longitudinal optical and acoustic phonons is considered for quasi-two-, one- and zero-dimensional (2D, 1D an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ac19ce79f5c498b5401b534aab5b27
https://doi.org/10.1088/0268-1242/9/5s/126
https://doi.org/10.1088/0268-1242/9/5s/126