Zobrazeno 1 - 10
of 51
pro vyhledávání: '"U. A. Mengui"'
Autor:
Eduardo Abramof, I. F. Costa, S. de Castro, M. L. Peres, Paulo H. O. Rappl, U. A. Mengui, D. A. W. Soares
Publikováno v:
Physical Review B. 104
In this work, we investigated magnetotransport properties in epitaxial heterostructure of $\mathrm{Sn}\mathrm{Te}\text{/}{\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{Eu}}_{x}\mathrm{Te}$ under dark and infrared light illumination. The longitudinal resist
Publikováno v:
Materials Science Forum. :1671-1676
We have proposed the growth of ultrananocrystalline diamond (UNCD) thin films on p-type (100) silicon etched with 27wt. % KOH in H2O. To get homogeneous distribution of micro pyramids on the silicon surface we have varied temperature (62 to 77 °C),
Publikováno v:
Surface and Coatings Technology. 202:2126-2131
The aim of this study was to investigate the influence of oxygen concentration in Ar/O2 gas mixture on the crystalline properties of TiO2 thin films obtained at low temperature by reactive magnetron sputtering technique. Mass spectrometry of plasma m
Autor:
L. B. Zoccal, Ioshiaki Doi, A. M. Dos Anjos, U. A. Mengui, M. A. Canesqui, José Alexandre Diniz
Publikováno v:
ECS Transactions. 9:269-277
A series of amorphous-SiO2/Ge and amorphous-Si:H/Ge heterostructures with four different layer sequences were grown on p-type Si (001) substrates. Rapid Thermal Annealing (RTA) at 1000{degree sign}C during 40s was used to modify the film structure. T
Autor:
S. de Castro, Valmir Antonio Chitta, Steffen Wiedmann, J. M. Schneider, Uli Zeitler, M. L. Peres, Paulo H. O. Rappl, U. A. Mengui, D. A. W. Soares, Nei F. Oliveira, Eduardo Abramof
Publikováno v:
Applied Physics Letters, 105
Applied Physics Letters, 105, 16
Applied Physics Letters, 105, 16
We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d1bc6da521d5b4a990df5440d81a9c4
http://hdl.handle.net/2066/133237
http://hdl.handle.net/2066/133237
Autor:
Airton Abrahão Martin, Teresa C.O. Marsi, Anderson Oliveira Lobo, Ana Maria do Espírito Santo, Evaldo José Corat, João Lucas Rangel, Tiago G. Santos, U. A. Mengui, Fernanda Roberta Marciano, Joao Anderson Ferreira Irineu
Publikováno v:
SPIE Proceedings.
Vertically-aligned multi-walled carbon nanotubes (VACNT) is of particular interest in regenerative medicine. Templateinduced hydroxyapatite (HA) has broad prospects in applied fields of bone regenerative medicine. Thus, it becomes very attractive a c
Publikováno v:
Brazilian Journal of Physics v.40 n.3 2010
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 40, Issue: 3, Pages: 340-343, Published: SEP 2010
ResearcherID
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 40, Issue: 3, Pages: 340-343, Published: SEP 2010
ResearcherID
In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150oC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1005b364df8f2702edaf830da2f53803
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
Autor:
U. A. Mengui, P. H. O. Rappl, B. Díaz, H. Closs, A. Y. Ueta, E. Abramof, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
We investigate here the electrical and structural properties of PbTe layers doped with BaF2. The layers were grown on (111) BaF2 substrates by molecular beam epitaxy. The nominal doping level, defined as the beam flux ratio between BaF2 and PbTe, was
Publikováno v:
Brazilian Journal of Physics, Volume: 36, Issue: 2a, Pages: 324-327, Published: JUN 2006
Brazilian Journal of Physics v.36 n.2a 2006
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics v.36 n.2a 2006
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxy on (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 Å as determined from x-ray diffraction spectra measured in the trip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::482482805d148508b9a9c4976648fc8e
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300024&lng=en&tlng=en
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300024&lng=en&tlng=en
Autor:
S. de Castro, Duncan K. Maude, Eduardo Abramof, Hektor Monteiro, M. L. Peres, Nei F. Oliveira, Valmir Antonio Chitta, Paulo H. O. Rappl, U. A. Mengui
Publikováno v:
Journal of Applied Physics. 115:093704
The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelast