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Publikováno v:
Journal of Crystal Growth. 372:145-156
A new experimental setup containing a GaInSn melt with a square horizontal cross section of 10×10 cm 2 and a variable melt height up to 10 cm has been developed. The melt is positioned in the center of a coil system generating a traveling magnetic f
Publikováno v:
Journal of Crystal Growth. 333:7-15
Low-temperature model experiments and 3D, time-dependent flow simulations with relevance to the melt motion during directional solidification of multicrystalline silicon under a traveling magnetic field are presented. The influence of the inductor cu
Publikováno v:
Scopus-Elsevier
Several doped and alloyed crystals such as Ge-Ga and Ge-Si were processed during the international FOTON-M3 spaceflight mission in September 2007. The growth furnace was equipped with a rotating magnetic field (RMF) with induction and frequency up to
Publikováno v:
Advanced Engineering Materials. 6:554-557
The Vertical Gradient Freeze (VGF) technique is an important method for growing high quality compound semiconductors such as GaAs. Results obtained with a novel VGF set-up developed for the growth under influence of a rotating magnetic field (RMF) an
Publikováno v:
Crystal Research and Technology. 39:195-199
The impact of a rotating magnetic field (RMF) on the axial segregation in Vertical Gradient Freeze (VGF) grown, Ga doped germanium is investigated. Growth experiments were performed using the VGF-RMF as well as the conventional VGF technique. Carrier
Publikováno v:
Journal of Crystal Growth 245 (2002) 237-246
Results on the growth of GaAs by the vertical gradient freeze (VGF) technique with a rotating magnetic field (RMF) are presented. The experiments were aimed at influencing the heat flux at the liquid-solid interface in a predefined way to reduce its
Publikováno v:
Applied Microbiology and Biotechnology. 53:441-446
A synthetic fluorinated humic acid (FHA) was prepared by the spontaneous oxidative polymerization of 3-fluorocatechol. The 13C-solid-state NMR spectrum showed signals in the region for aromatic carbons with different substituents (aryl-H, aryl-C, ary
Publikováno v:
Journal of Crystal Growth. 303:250-252
The influence of a rotating magnetic field (RMF) on the vertical gradient freeze (VGF) growth of Ga-doped Ge is studied numerically using the program CrysVun ++ . On the basis of a global, time-dependent simulation of the VGF process including the me