Zobrazeno 1 - 10
of 140
pro vyhledávání: '"U Seiler"'
Autor:
A. Lechner, F. Obermair, P. Zeilinger, U. Seiler, M. Richter, Josef Wolfartsberger, L. Pfaffeneder, J. Althaler
Publikováno v:
2020 IEEE 7th International Conference on Industrial Engineering and Applications (ICIEA).
Basic repair and maintenance tasks of industrial machines are usually performed by local service personnel at the location of the component to be maintained. Complex maintenance tasks require an expert who travels to the customer to solve a specific
Autor:
K.-U. Seiler, J. D. Herrlinger
Publikováno v:
DMW - Deutsche Medizinische Wochenschrift. 105:22-27
Aurokeratinate (Auro-Detoxin) was administered intramuscularly to patients with chronic rheumatoid arthritis, using two different dosage schedules and measuring serum gold concentration. (1) Using slowly rising doses (as generally practised) the gold
Autor:
Jing Zhang, Rongqiang Li, Kaicheng Li, Peixin Qian, Yukui Liu, Daoguang Liu, Shiliu Xu, Yue Hao, Kaiquan He, Jun Xu, Zhengfan Zhang, H. Kibbel, G Chen, U Seiler, U. Konig, Z Liu, Rongkan Liu, Gangyi Hu, A. Gruhle, L Liu
Publikováno v:
ECS Transactions. 3:365-376
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry & wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). The measured results are: cutoff frequency fT=103.3GH
Publikováno v:
AEU - International Journal of Electronics and Communications. 57:154-158
For point to point wireless links as well as for microwave near range sensors a miniaturized transceiver front end is investigated for direct up and down conversion at 24.1 GHz as well as for a center frequency of 22.3 GHz for the application of a 1.
Autor:
M. Kummer, H.-J. Herzog, Thomas Hackbarth, T. Mack, U. Seiler, R. Sauer, H. von Känel, Jürgen Ramm
Publikováno v:
Materials Science and Engineering: B. 89:368-372
This paper reports on the preparation and assessment of Si/SiGe based n-type field-effect transistors (n-FET). The layer growth was carried out in a two step epitaxy procedure. First, a strain-relieved SiGe layer with a final Ge fraction of 40% was d
Publikováno v:
The Journal of Clinical Pharmacology. 41:79-84
The aim of the present study was to investigate the pharmacokinetics of tilidine and its metabolites during the dialysis procedure and in the dialysis-free interval. Tilidine is a prodrug that is metabolized presystemically into the active metabolite
Autor:
J. Albers, A. Schuppen, R. Gotzfried, H. Dietrich, K.-H. Bach, U. Seiler, F. Beisswanger, S. Gerlach
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:661-668
We report on design aspects and the implementation of RF integrated circuits (RFIC's) using TEMIC's SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT's with 50-GHz f/sub T/ and f/sub max/ were obtained by a production process includin
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:122-127
The consequence of the reciprocal relation between the temperature and current distributions in heterojunction bipolar transistors (HBTs) has been determined. The dc current voltage (I-V) characteristics, RF small-signal parameters, and temperature d
Publikováno v:
Astronomische Nachrichten. 316:419-423
Periodic changes in Universal Time and polar motion have been derived from a numerical ocean model for a number of small partial tides. Combined with the results reported earlier our model now includes the 34 most important constituents of degree 2 (
Autor:
H.-J. Herzog, U. Seiler, S. Mantl, Martina Luysberg, Thomas Hackbarth, U. Konig, Bernhard Holländer
Publikováno v:
IEEE Electron Device Letters. 23:485-487
Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by me