Zobrazeno 1 - 10
of 31
pro vyhledávání: '"U Meiners"'
Autor:
D. Floriot, U. Meiners, Helmut Jung, V. Brunel, Marc Camiade, Michael Hosch, H. Blanck, Z. Ouarch-Provost, J. Splettstößer, C. Chang, Benoit Lambert, J. Grünenpütt
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd59c978a8e858a66474fd44f226bed
https://doi.org/10.1109/eumic.2014.6997833
https://doi.org/10.1109/eumic.2014.6997833
Publikováno v:
Journal of Applied Physics. 77:6026-6030
The noise characteristics of symmetrical double barrier resonant tunneling structures were measured in two samples with a fixed well width of 50 A and barrier thicknesses of LB=8 monolayer and 10 ML, respectively. The measurement was done in the freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b963bec6ef82f143dcc34f77445a403c
https://doi.org/10.1063/1.359187
https://doi.org/10.1063/1.359187
Publikováno v:
Solid-State Electronics. 37:1001-1004
A new type of a quasi one-dimensional planar field-effect-transistor (FET) with two lateral and symmetric in-plane-gate electrodes (IPG) is realized. The vertical layer sequence consists of a GaAs/AlGaAs heterostructure and a δ-doped pseudomorphic I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683c91ba8676be41ca5daf0594a58d21
https://doi.org/10.1016/0038-1101(94)90345-x
https://doi.org/10.1016/0038-1101(94)90345-x
Publikováno v:
Solid-State Electronics. 37:801-804
A new type of a hydrostatic pressure sensing device based on a thin AlAs/GaAs/AlAs double-barrier resonant tunneling (DBRT) structure is reported, which operates at room temperature. The current swing ( ΔI ) in the negative-differential resistance r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42c0413c178671e24f629320efa6590
https://doi.org/10.1016/0038-1101(94)90301-8
https://doi.org/10.1016/0038-1101(94)90301-8
Publikováno v:
Acta Physica Polonica A. 84:625-628
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbbe4249c4c2b43a147db3914e8c737a
https://doi.org/10.12693/aphyspola.84.625
https://doi.org/10.12693/aphyspola.84.625
Publikováno v:
Semiconductor Science and Technology. 8:1352-1356
Tunnelling processes in thin double-barrier GaAs/AlAs diodes have been studied under hydrostatic pressure. Gamma -X tunnelling strongly influences the current-voltage (I-V) characteristics of samples having barriers ten monolayers thick. Non-resonant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a62ce6fe64f6509d9fefc39028797e8
https://doi.org/10.1088/0268-1242/8/7/026
https://doi.org/10.1088/0268-1242/8/7/026
Autor:
R. Deufel, U. Meiners, Hans Brugger, A. Marten, R. Sauer, Klaus von Klitzing, M. Rossmanith, C. Wolk
Publikováno v:
Microelectronic Engineering. 15:663-666
A resonant tunneling diode with the highest room temperature peak-to-valley current ratio (PVR) in the GaAs/AlGaAs system is described. Using a pseudomorphic InGaAs quantum well for carrier injection, room temperature PVR = 7.2 and liquid nitrogen te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69804d9fd947891ef7884c193f62756f
https://doi.org/10.1016/0167-9317(91)90306-x
https://doi.org/10.1016/0167-9317(91)90306-x
Publikováno v:
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
The influence of the barrier thickness (L/sub B/) and the spacer length (L/sub S/) on the current/voltage behavior of AlAs/GaAs/AlAs resonant tunneling diodes (RTDs) to achieve a high peak current density (J/sub p/) and a low valley current density (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab3760a6504d53e00e3f75c1dcbcbbd
https://doi.org/10.1109/cornel.1991.170031
https://doi.org/10.1109/cornel.1991.170031
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468b74e6df77fb7f36a71e7de640f9be
https://doi.org/10.7567/ssdm.1992.s-iii-17
https://doi.org/10.7567/ssdm.1992.s-iii-17
Autor:
K.-L. Diehl, H. Wernze, M. Middeke, A. Burkhart, H. Holzgreve, I. P. Arlart, J. Rosenthal, R. Strasser, R. Dietz, A. Schömig, J. Manthey, W. Kübler, H. Zschiedrich, G. Renschin, J. B. Lüth, T. Philipp, A. Distler, A. Overlack, K. O. Stumpe, H. M. Müller, A. G. Scicli, O. A. Carretero, F. Weber, O.-E. Brodde, M. Anlauf, K. D. Bock, N. Graben, G. Wambach, U. Meiners, A. Konrads, G. Bönner, W. Kaufmann, B. Stanek, K. Silberbauer, C. Punzengruber, R. Kolloch, U. Bähner, F. Krück, H.-J. Gröne, U. Helmchen, E. J. Kirchertz, J. Rieger, F. Scheler, S. Abdelhamid, P. Vecsei, P. Fiegel, D. Walb, N. Panitz, G. Hommel, H. L. Christl, D. Haack, J. Mann, M. Rambausek, P. Klooker, D. Ganten, E. Ritz, A. W. von Eiff, G. M. Friedrich, E. Gogolin, H. M. Lutz, H. Neus, W. Schulte
Publikováno v:
Verhandlungen der Deutschen Gesellschaft für innere Medizin ISBN: 9783807003320
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f56610abba88dc31007f70ee807e20
https://doi.org/10.1007/978-3-642-47093-6_17
https://doi.org/10.1007/978-3-642-47093-6_17
