Zobrazeno 1 - 10
of 23
pro vyhledávání: '"U, Sajesh Kumar"'
Publikováno v:
2022 IEEE 19th India Council International Conference (INDICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9d997406bddfa7aa0ee4519944bd76
https://doi.org/10.1109/indicon56171.2022.10040054
https://doi.org/10.1109/indicon56171.2022.10040054
Publikováno v:
IEEE Transactions on Electron Devices. 68:2618-2624
In this article, the power gating (PG) technique is analyzed using nano-electro-mechanical switches (NEMS), FinFETs, and nanowire field-effect transistors (NWFETs). We have used detailed circuit level simulations using well-calibrated models to obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3703a89eb79c50c47e50741e2881a7ea
https://doi.org/10.1109/ted.2021.3074349
https://doi.org/10.1109/ted.2021.3074349
Autor:
U. Sajesh Kumar, K. P. Krishna Priya
Publikováno v:
Sustainable Communication Networks and Application ISBN: 9789811586767
The conventional complementary metal-oxide-semiconductor (CMOS) technology is coming to an end due to its large power dissipation and self-heating. This can be solved by utilizing the ‘negative capacitance’ (NC) effect. To observe this negative c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660713bcffced27c1710c5824c7643c0
https://doi.org/10.1007/978-981-15-8677-4_32
https://doi.org/10.1007/978-981-15-8677-4_32
Publikováno v:
Sustainable Communication Networks and Application ISBN: 9789811586767
Electronic noses or array sensors are very popular in the last decades because of their ability to avoid the cross-sensitivity issue in semiconductor metal oxide (SMO) gas sensors. The identification and discrimination of toxic gases have a significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9d14fabf09db970cfd92af5bc47055
https://doi.org/10.1007/978-981-15-8677-4_31
https://doi.org/10.1007/978-981-15-8677-4_31
Autor:
V V Jayasree, U. Sajesh Kumar
Publikováno v:
2020 Third International Conference on Smart Systems and Inventive Technology (ICSSIT).
This paper discusses the effect of technology scaling in the performance of electrical parameters of NEMS (Nano Electro Mechanical Switch) devices in switching applications. This has been done by modeling a typical Cantilever NEMS with fixed dimensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94357aca38f1a27af1045fb814bc4d6d
https://doi.org/10.1109/icssit48917.2020.9214098
https://doi.org/10.1109/icssit48917.2020.9214098
Publikováno v:
IEEE Electron Device Letters. 38:681-684
In this letter, we show that using the experimentally demonstrated nano-electro-mechanical-switches (NEMS) and our design methodology, the standby power dissipation can be reduced to negligible levels in 14-nm bulk FinFET technologies. Using two real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f04332ce1546879039026aa80594e66
https://doi.org/10.1109/led.2017.2686649
https://doi.org/10.1109/led.2017.2686649
Publikováno v:
2017 International Conference on Intelligent Computing, Instrumentation and Control Technologies (ICICICT).
Nanowire MOSFETs are recognized as one of the most promising candidate to extend Moore's law in nanoelectronics era. These are widely accepted and studied by various research groups. Self-heating becomes important in Nanowire MOSFETs due to its ultra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92aa90ac0a4dc28d9d56770c50ef31ee
https://doi.org/10.1109/icicict1.2017.8342590
https://doi.org/10.1109/icicict1.2017.8342590
Autor:
V. Ramgopal Rao, U. Sajesh Kumar
Publikováno v:
IndraStra Global.
Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order ${R}_{\textrm {th}}{C}_{\textrm {th}}$ network extraction, we demonstrate for the first time a simp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::235d18eb42f18a4fc3d17c6102fa949a
https://igi.indrastra.com/items/show/56768
https://igi.indrastra.com/items/show/56768
Autor:
V. Ramgopal Rao, U. Sajesh Kumar
Publikováno v:
2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
Self-heating effects of sub-20-nm fin-shaped FET (FinFET) technologies are studied and analyzed in this work using well-calibrated TCAD 3-D electro thermal simulations. We show that the thermal performance characteristics can be accurately measured f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f426d716bba66e1f53dbf19ce6b5fde6
https://doi.org/10.1109/itherm.2016.7517735
https://doi.org/10.1109/itherm.2016.7517735