Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Tzung Shian Wu"'
Autor:
Tzung Shian Wu, Shen-Li Chen
Publikováno v:
Advanced Materials Research. :1207-1211
In this paper, we propose a novel high-voltage (HV) nLDMOS transistor with a small Ron resistance, low trigger voltage (Vt1) and high holding voltage (Vh) characteristics. Here, we introduce a deep N+-buried-layer (NBL) into this HV nLDMOS to evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8679e45664f69b141b6520c5e49d9616
https://doi.org/10.4028/www.scientific.net/amr.732-733.1207
https://doi.org/10.4028/www.scientific.net/amr.732-733.1207
Publikováno v:
Advanced Materials Research. :1454-1458
An nMOS transistor in input/output pad as the ESD protection element is usually in the form of multi-finger layout. This paper will show simple but effective ways to improve an nMOSFET’s ESD robustness or LU immunity for use in I/O pads, i.e., the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18731a7ff6fa70097852cdb2940300be
https://doi.org/10.4028/www.scientific.net/amr.694-697.1454
https://doi.org/10.4028/www.scientific.net/amr.694-697.1454
Publikováno v:
2016 International Symposium on Computer, Consumer and Control (IS3C).
N-channel MOSFETs are often applied to the input/output ports as electrostatic discharge (ESD) protection elements, usually in the form of multi-finger placement. However, the non-uniform turned-on situation always occurred, therefore these sub-nMOSF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b814cfd21ffef825f3fe8c2015e0ebf
https://doi.org/10.1109/is3c.2016.162
https://doi.org/10.1109/is3c.2016.162
Autor:
Tzung Shian Wu, Shen-Li Chen
Publikováno v:
Applied Mechanics and Materials. :1082-1086
In an nLDMOS, both the drain-side and source-side engineering by adding Nad and Pad layers to obtain a weak snapback characteristic are presented in this work. In this paper, we will detailedly discuss the trigger voltage (Vt1) and holding voltage (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19fc075c1a3864d5bcea7c0795dd199b
https://doi.org/10.4028/www.scientific.net/amm.271-272.1082
https://doi.org/10.4028/www.scientific.net/amm.271-272.1082
Publikováno v:
Advanced Materials Research. :81-84
This paper applied the Taguchi method to simulate the latch-up effect of nLDMOS to achieve an optimization design. The applied model is for an nLDMOS structure with high voltage well plus the adaptive (adjustment) layers of source & drain, and an N-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf964c40c10b63a95f8cd833c641523
https://doi.org/10.4028/www.scientific.net/amr.482-484.81
https://doi.org/10.4028/www.scientific.net/amr.482-484.81
Autor:
Cheng Bang Huo, Chou Wen-Chen, Ying Tung Chen, Kung-Jeng Ma, Chung Woei Chao, Tzung Shian Wu, Choung Lii Chao, Chien Huang Kuo
Publikováno v:
Defect and Diffusion Forum. :808-813
The glass molding process (GMP) is regarded as a very promising technique for mass producing high precision optical components such as spherical/ aspheric glass lenses and free-form optics. However, only a handful of materials can sustain the chemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39cf97d6afdd8eff03f6de49f3dcfa01
https://doi.org/10.4028/www.scientific.net/ddf.297-301.808
https://doi.org/10.4028/www.scientific.net/ddf.297-301.808
Autor:
Jau Hong Lin, Chia-Hsin Chen, Tzung Shian Wu, Miao Ju Hsu, Ruey Tay Lin, Ching-Lin Hsieh, Ching-Fan Sheu
Publikováno v:
Physical Therapy. 89:840-850
BackgroundFunctional limitation of the upper extremities is common in patients with stroke. An upper-extremity measure with sound psychometric properties is indispensable for clinical and research use.ObjectiveThe purpose of this study was to compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecf144bb7a890c1451912867116e7c23
https://doi.org/10.2522/ptj.20080285
https://doi.org/10.2522/ptj.20080285
Autor:
Szu-Han Wu, Mei-Hui Chung, Yi-Ming Kuo, Tzung-Shian Wu, Jian-Wen Wang, Cheng-Hsien Tsai, Li-Chun Cheng
Publikováno v:
Journal of Applied Polymer Science. 131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32925c29dda0d7900329847e5eb21bd4
https://doi.org/10.1002/app.40436
https://doi.org/10.1002/app.40436
Publikováno v:
Intelligent Technologies and Engineering Systems ISBN: 9781461467465
Latch-up (LU)/electrostatic discharge (ESD) protection inclinations of a high-voltage (HV) IC reliability are investigated in this chapter, where the test DUTs were fabricated by a 0.25 um 60 V BCD process. In order to effectively evaluate the LU and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4431d6d96fc6dbb0f91c522aecb111
https://doi.org/10.1007/978-1-4614-6747-2_60
https://doi.org/10.1007/978-1-4614-6747-2_60
Autor:
Tzung-shian Wu, 吳宗憲
100
This research aims at the investigation of preparing the superhydrophobic surfaces on the aluminum materials by simulating the lotus effect. The preparation of superhydrophobic surface requires two important factors: The one factor in that t
This research aims at the investigation of preparing the superhydrophobic surfaces on the aluminum materials by simulating the lotus effect. The preparation of superhydrophobic surface requires two important factors: The one factor in that t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/09068177666007581267