Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tzung Shen Chen"'
Autor:
Shuo-Nan Hung, Meng-Fan Chang, Jo-Yu Hsu, Yih-Shan Yang, Chi-Yu Hung, Yen-Hao Shih, Tzung Shen Chen, Tzu-Neng Lai, Yao-Jen Kuo, Chun-Hsiung Hung, Shin-Jang Shen, Chung Kuang Chen, Ti-Wen Chen, Chih-Yuan Lu, Hang-Ting Lue, Shih-Lin Huang
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1491-1501
3D vertical-gate (3DVG) NAND flash is a promising candidate for next-generation high-density nonvolatile memory. Cross-layer process variation renders 3DVG NAND susceptible to decreased speeds, yield, and reliability. This can be attributed to (a) cr
Autor:
Chia-Jung Chiu, Ti-Wen Chen, Chih-Shen Chang, Chih-Yuan Lu, Yen-Hao Shih, Chih-Wei Hu, Tzung Shen Chen, Hang-Ting Lue, Shih-Lin Huang, Yan-Ru Chen, Wen-Wei Yeh, Kuo-Pin Chang, S. C. Huang, Chun-Hsiung Hung, Yi-Hsuan Hsiao, Shuo-Nan Hung, Shih-Hung Chen, Chih-Chang Hsieh, Guan-Ru Lee, Chieh-Fang Chen
Publikováno v:
2012 International Electron Devices Meeting.
The design architecture for 3D vertical gate (VG) NAND Flash is discussed in detail. With the unique structure of 3D VG and its decoding method, we have developed several important design innovations to optimize this technology: (1) “Shift-BL scram
Autor:
Tzung-Shen Chen, 陳宗申
92
Demand for high-speed and high-resolution digital—analog converters (DACs) continues to grow every year, driven primarily by strong growth in the markets for wired communication systems such as broadband modems employing emerging standards
Demand for high-speed and high-resolution digital—analog converters (DACs) continues to grow every year, driven primarily by strong growth in the markets for wired communication systems such as broadband modems employing emerging standards
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/04464878907841686571