Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Tzung Da Tsai"'
Publikováno v:
Organic Electronics. 15:3805-3810
This work investigates the suppression of n-channel and the switch of transfer characteristics (from n-type to ambipolar) by illumination in n-type pentacene-based organic field-effect transistors (OFETs). The illumination outcomes differently on the
Autor:
Jer Wei Chang, Ten-Chin Wen, Chih-I Wu, Ming Wei Lin, Tzung-Fang Guo, Cheng Guang Wang, Jung Hung Chang, Tzung Da Tsai
Publikováno v:
Organic Electronics. 15:1759-1766
With aluminum (Al) source–drain electrodes, the transfer characteristics of pentacene-based organic field-effect transistors (OFETs) change from ambipolar to n-type after 24 h of storage in a nitrogen-filled glove box Chang et al. (2011) [16]. The
Autor:
Pei Ying Lin, Ten-Chin Wen, Tsung Yu Chiang, Jun Yuan Jeng, Peter Chen, Tzung-Fang Guo, Yun-Chorng Chang, Tzung Da Tsai, Yao Jane Hsu, Kuo Cheng Chen
Publikováno v:
Advanced Materials. 26:4107-4113
This study successfully demonstrates the application of inorganic p-type nickel oxide (NiOx ) as electrode interlayer for the fabrication of NiOx /CH3 NH3 PbI3 perovskite/PCBM PHJ hybrid solar cells with a respectable solar-to-electrical PCE of 7.8%.
Publikováno v:
Advanced Functional Materials. 23:4206-4214
The origins of hysteresis in organic field-effect transistors (OFETs) and its applications in organic memory devices is investigated. It is found that the orientations of the hydroxyl groups in poly(vinyl alcohol) (PVA) gate dielectrics are correlate
Autor:
Ten-Chin Wen, Tzung-Da Tsai, Tzung-Fang Guo, Yao-Jane Hsu, Chen-Yan Li, Chen Hao Wu, Wei-Chou Hsu, Sung-Nien Hsieh, Jia-Rong Syu, Ying-Nien Chou
Publikováno v:
Organic Electronics. 12:1477-1482
An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed to
Autor:
Ying Shian Liou, Je Yuan Yeh, Zhao You Chang, Raymond Chien-Chao Tsiang, Tzung Da Tsai, Tzung-Fang Guo, An-Tsung Kuo, Chien Hsiang Chang, Ying Shiun Chou
Publikováno v:
Journal of nanoscience and nanotechnology. 15(5)
Self-assembled 3-azidopropyltriethoxysilane monolayer (SAM) is used as a dielectric layer to modify the interface between the silicon dioxide wafer and the pentacene semiconductor layer in an organic thin film transistor (OTFT), Au/pentacene/3-azidop
Autor:
Shih Ming Wang, Yun-Chorng Chang, Tzung-Fang Guo, Tzung Da Tsai, Sih Chen Lu, Hsin Chan Chung
Publikováno v:
Scientific Reports
Various infra-red and planar chiral metamaterials were fabricated using the modified Nanospherical-Lens Lithography. By replacing the light source with a hand-held ultraviolet lamp, its asymmetric light emission pattern produces the elliptical-shaped
Publikováno v:
SPIE Newsroom.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 23(35)
Autor:
Tzung-Da Tsai, 蔡宗達
97
This study presents on hysteresis of pentacene-based organic field effect transistors (OFET) with pentacene as active layer, gold as source-drain electrodes, and polyvinyl alcohol (PVA) as dielectrics. By reducing water solvent residual in PV
This study presents on hysteresis of pentacene-based organic field effect transistors (OFET) with pentacene as active layer, gold as source-drain electrodes, and polyvinyl alcohol (PVA) as dielectrics. By reducing water solvent residual in PV
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/42845106976683986431