Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Tzuen-Rong Yang"'
Publikováno v:
Crystals, Vol 13, Iss 10, p 1508 (2023)
The lattice dynamical properties of dilute InAs1−xNx/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was e
Externí odkaz:
https://doaj.org/article/15b656ead6054f29ac2f1c78ddb5de97
Publikováno v:
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 777-791 (2016)
A comprehensive lattice dynamical study is reported to emphasize the vibrational behavior of perfect/imperfect zinc-blende (zb) ZnSe, MnSe and Zn1−xMnxSe alloys. Low temperature far-infrared (FIR) reflectivity measurements performed on a series of
Externí odkaz:
https://doaj.org/article/079ca484058e4d2d83eedef9c2e9f1ec
Publikováno v:
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 777-791 (2016)
A comprehensive lattice dynamical study is reported to emphasize the vibrational behavior of perfect/imperfect zinc-blende (zb) ZnSe, MnSe and Zn1−xMnxSe alloys. Low temperature far-infrared (FIR) reflectivity measurements performed on a series of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02aa5507276127202aa3fcce720e9cf5
https://doi.org/10.1080/14686996.2016.1222495
https://doi.org/10.1080/14686996.2016.1222495
Publikováno v:
physica status solidi c. 12:430-433
Comprehensive calculations of the long-wavelength optical phonons are reported for zinc-blende BN films by exploiting a linear response theory to simulate far-infrared reflectivity and transmission spectra at oblique incidence. A rigid-ion-model is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1994b518c440608a31674f139c47bb09
https://doi.org/10.1002/pssc.201400157
https://doi.org/10.1002/pssc.201400157
Publikováno v:
International Journal of Modern Physics B. 22:991-996
MgB 2 thin films were deposited at low temperature substrates, in situ, on c-plane sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-five
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60db3b04e97e1a563aba9ebb61e8710c
https://doi.org/10.1142/s0217979208038934
https://doi.org/10.1142/s0217979208038934
Publikováno v:
International Journal of Modern Physics B. 21:127-132
The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3c74568c8350a028b924bf0fd0e07f
https://doi.org/10.1142/s0217979207035923
https://doi.org/10.1142/s0217979207035923
Publikováno v:
Thin Solid Films. 498:158-162
Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition (MOCVD) have been investigated by far-infrared (FIR) reflectance spectroscopy. The lattice vibration behaviors of a series of MOCVD InSb/GaAs(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c259e9dcd3d6cfdfc8da1d82d8f5b8
https://doi.org/10.1016/j.tsf.2005.07.067
https://doi.org/10.1016/j.tsf.2005.07.067
Publikováno v:
Thin Solid Films. 498:167-173
Two sets of (Al x Ga 1− x ) 0.5 In 0.5 P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photolumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9562625bbd10ac79a72f499d174c2fb9
https://doi.org/10.1016/j.tsf.2005.07.070
https://doi.org/10.1016/j.tsf.2005.07.070
Publikováno v:
Thin Solid Films. 498:118-122
The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a28613f962376bb9dd3753a4b96c502
https://doi.org/10.1016/j.tsf.2005.07.087
https://doi.org/10.1016/j.tsf.2005.07.087
Publikováno v:
Surface and Coatings Technology. 200:3254-3260
A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10–30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398faa6dc23f6c02bf4122f3183116f8
https://doi.org/10.1016/j.surfcoat.2005.07.025
https://doi.org/10.1016/j.surfcoat.2005.07.025