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Autor:
Chungpin Liao, Tsing-Tyan Yang, Tzuen-His Huang, Chung Len Lee, Ting Shien Duh, Lurng Shehng Lee, Denny Duan-Lee Tang
Publikováno v:
IEEE Transactions on Electron Devices. 48:928-934
This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors. Topics on two approaches, i.e., one using Al as the radiation m