Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Tzu-Min Ou"'
Autor:
Tzu-Min Ou, 歐子銘
94
In this thesis, we investigate the vertical-type organic thin film transistors (OTFTs). All the devices are fabricated through shadow masks by thermal evaporation. From the current-voltage (I-V) characteristics of thickness-varying Schottky d
In this thesis, we investigate the vertical-type organic thin film transistors (OTFTs). All the devices are fabricated through shadow masks by thermal evaporation. From the current-voltage (I-V) characteristics of thickness-varying Schottky d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61046786432430112951
Publikováno v:
Materials Science Forum. 858:1153-1157
A novel infrared photodiode based on a graphene/n-type silicon heterojunction is explored. The heterojunction photodiode of interest has a large Schottky barrier that results in a low dark current. Graphene serves as the absorbing medium at a wavelen
Publikováno v:
IEEE Transactions on Nanotechnology. 6:589-594
In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The
Autor:
Che-Hsi Chao, Yi-Jen Chan, Shin-Yen Lin, Shiau-Shin Cheng, Meng-Chyi Wu, Chun-Hung Wu, Tzu-Min Ou, Chuan-Yi Yang
Publikováno v:
IEEE Transactions on Electron Devices. 54:1633-1636
Pentacene-based planar- and vertical-type organic thin-film transistors (OTFTs) are investigated in this paper. High operation voltages are observed for the planar-type OTFTs with top source/drain electrodes, which results from the limitations of cha
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
Graphene is known for its high carrier mobility and high saturation velocity [1–3]. The majority of graphene transistors in the literature—including MOSFETs, barristors, and tunneling FETs—have a gate separated from the channel by a conventiona
Publikováno v:
Journal of Lightwave Technology. 24:2906-2911
The fabrication and characteristics of 1.3-/spl mu/m InGaAsP strain-compensated multiquantum well (SCMQW) buried heterostructure (BH) laser diodes (LDs) grown by selective metal-organic chemical vapor epitaxy on a patterned InP substrate are demonstr
Autor:
Cheng-Shuan Tsai, Cheng-Chung Chi, Meng-Chyi Wu, Jim-Yong Chi, Chun-Yuan Huang, Shu-Ting Chou, Shih-Yen Lin, Tzu-Min Ou, Bang-Yu Hsu
Publikováno v:
Thin Solid Films. 515:4459-4461
We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 × 10 11 cm − 2 were
Autor:
Tzu-Min, Ou.
Thesis (M.A.)--National Tsing Hua University Institute of Electronics Engineering.
Includes bibliographical references.
Includes bibliographical references.
Autor:
Chuan-Yi Yang, Shiau-Shin Cheng, Shih-Yen Lin, Yi-Jen Chan, I-Min Chan, Tzu-Min Ou, Chun-Yuan Huang, Meng-Chyi Wu, Shu-Ting Chou
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:43
Experimental results of static and dynamic characteristics for single-layer hole-only devices based on copper phthalcyanine (CuPc) and pentacene are observed in this article. The contribution to injection currents from electrode has been investigated
Autor:
Chuan-Yi Yang, Shih-Yen Lin, Yi-Jen Chan, Tzu-Min Ou, I-Min Chan, Meng-Chyi Wu, Shiau-Shin Cheng
Publikováno v:
Applied Physics Letters. 89:183511
The authors report the fabrication of vertical organic triodes operated in the pronounced saturation regions by using two back-to-back pentacene Schottky diodes. The device with an optimized 0.7nm LiF hole injection enhancement layer and a 70nm penta