Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tzu-Juei Wang"'
Autor:
Tzu-Juei Wang, 王子睿
97
In this dissertation, we investigate the effects of uniaixal strain on the characteristics of nanoscale CMOS and BiCMOS devices. By utilizing a 4-point mechanical bending technique, we explore the accurate strain responses of device character
In this dissertation, we investigate the effects of uniaixal strain on the characteristics of nanoscale CMOS and BiCMOS devices. By utilizing a 4-point mechanical bending technique, we explore the accurate strain responses of device character
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/59162889596780467934
Autor:
Tzu-Juei Wang, 王子睿
92
In this these, two p-type SiGe doped-channel field-effect transistors with different Ge profile were grown by solid-source molecular beam epitaxy (SSMBE). Secondary ion mass spectrum (SIMS) was used to verify the Ge profile in Si1-xGex channe
In this these, two p-type SiGe doped-channel field-effect transistors with different Ge profile were grown by solid-source molecular beam epitaxy (SSMBE). Secondary ion mass spectrum (SIMS) was used to verify the Ge profile in Si1-xGex channe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85419943733667498540
Autor:
Chin-Kai Hung, Cheng Tung Huang, Osbert Cheng, Yao-Tsung Huang, Tzu-Juei Wang, Shoou-Jinn Chang, San-Lein Wu, Cheng-Wen Kuo
Publikováno v:
IEEE Transactions on Nanotechnology. 10:433-438
This paper reports an improved densification anneal process for sub-atmospheric chemical vapor deposition (SACVD)-based shallow trench isolation (STI) to enhance CMOSFETs performance for 40-nm node and beyond. The improved STI densification process i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415fa78063ae2550935a1e853814b0a9
https://doi.org/10.1109/tnano.2010.2046744
https://doi.org/10.1109/tnano.2010.2046744
Autor:
Chee-Wee Liu, Tzu-Juei Wang, Wen-Wei Hsu, Chao-Yun Lai, Ta-Ming Kuan, Chih-Hsin Ko, Wen-Chin Lee, Clement H Wann
Publikováno v:
IEEE Transactions on Electron Devices. 57:2526-2530
Short-channel controllability by insulating halo (IH) is investigated using the NFET strained-Si technology. By embedding SiO2/Si3N4 insulators in the halo regions, the increase of halo implant concentration reduces source/drain depths and improves s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06d70b863395c131edb6000745cc05e
https://doi.org/10.1109/ted.2010.2061751
https://doi.org/10.1109/ted.2010.2061751
Autor:
Y. T. Hou, Tzu-Juei Wang, K. C. Lin, P. F. Hsu, C. Y. Cheng, T. L. Lee, K. T. Huang, J. C. Liao, Mong-Song Liang, Yean-Kuen Fang
Publikováno v:
Solid-State Electronics. 53:892-896
The effects of shallow trench isolation (STI) induced mechanical strain on gate induced drain leakage (GIDL) current in Hf-based and SiON n-type metal oxide semiconductor field effect transistors (nMOSFETs) are investigated in detail. With T-CAD simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23e1308175f82a65fbd43a94b30beaa
https://doi.org/10.1016/j.sse.2009.04.020
https://doi.org/10.1016/j.sse.2009.04.020
Autor:
Wen-Chin Lee, Hong-Nien Lin, Tzu-Juei Wang, Shoou-Jinn Chang, Chih-Hsin Ko, San-Lein Wu, Ta-Ming Kuan
Publikováno v:
IEEE Transactions on Electron Devices. 55:3221-3226
Extrinsic source/drain series resistance (R SD) is becoming inevitably dominant in state-of-the-art CMOS technologies as the intrinsic device resistance continues to scale with channel length dictated by the Moore's Law. As a result, advanced scaling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae6f1f31413a344e7c72d6ac39cabc7
https://doi.org/10.1109/ted.2008.2004245
https://doi.org/10.1109/ted.2008.2004245
Publikováno v:
IEEE Transactions on Electron Devices. 55:572-577
This paper reports the influences of uniaxial mechanical stress on the reverse-biased source/drain to substrate junction leakage of state-of-the-art 65 nm CMOS transistors. For n-channel metal-oxide-semiconductor (NMOS) transistors, the band-to-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfe63fe7342447634b3390c788d099a7
https://doi.org/10.1109/ted.2007.912363
https://doi.org/10.1109/ted.2007.912363
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We have demonstrated successfully the integration scheme of metallized source/drain extension (M-SDE) with state-of-the-art strained-Si technique. Drain currents of N-FET (Lgate = 40 nm) and P-FET (Lgate = 35 nm) with M-SDE can achieve 1620 muA/mum a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b305deb2e4d327ed5ffeca74c5c20aee
https://doi.org/10.1109/vlsit.2007.4339750
https://doi.org/10.1109/vlsit.2007.4339750
Autor:
Denny Tang, San-Lein Wu, Ping-Chun Yeh, Wen-Chin Lee, John Yeh, Hung-Wei Chen, Tzu-Juei Wang, Chih-Hsin Ko, Shoou-Jinn Chang
Publikováno v:
2006 International SiGe Technology and Device Meeting.
In this work, we investigate the characteristics of collector current (IC) and breakdown voltage (BVCEO) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaIc and DeltaBVCEO is found to be strain-polarity depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d92617b62e214ff602695533ce125d14
https://doi.org/10.1109/istdm.2006.1715971
https://doi.org/10.1109/istdm.2006.1715971
Autor:
Tzu-Juei Wang1, Chih-Hsin Ko2, Hong-Nien Lin2, Shoou-Jinn Chang1 changsj@mail.ncku.edu.tw, Sap-Lein Wu3, Ta-Ming Kuan2, Wen-Chin Lee2
Publikováno v:
IEEE Transactions on Electron Devices. Nov2008, Vol. 55 Issue 11, p3221-3226. 6p.