Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Tzu Min Hsu"'
Autor:
Tzu Min Hsu, 許慈敏
99
The major purpose of this research is discussing the influence between Corporate Image, Perceived Value, Salesperson Characteristics, Trust and Customer Loyalty. In order to realize how the Financial Tsunami made things different, and prompt
The major purpose of this research is discussing the influence between Corporate Image, Perceived Value, Salesperson Characteristics, Trust and Customer Loyalty. In order to realize how the Financial Tsunami made things different, and prompt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/62599126289293113923
Autor:
Ikai Lo, Wen-Yuan Pang, Wen-Yen Chen, Yu-Chi Hsu, Chia-Ho Hsieh, Cheng-Hung Shih, Mitch M. C. Chou, Tzu-Min Hsu, Gary Z. L. Hsu
Publikováno v:
AIP Advances, Vol 3, Iss 6, Pp 062134-062134 (2013)
The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO2 substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-pola
Externí odkaz:
https://doaj.org/article/ee397a4a1d234b2a83b0bac0de47bcc5
Autor:
Wei-Ting Lai, Hung-Tai Chang, C. C. Wang, I. H. Chen, Jung-Chao Hsu, Pei-Wen Li, Ming-Tsung Hung, K. H. Chen, Wen-Yen Chen, Tzu-Min Hsu, Shen-Wei Lee
Publikováno v:
IEEE Transactions on Nanotechnology. 11:657-660
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18d85c0d7b74cac20591935a6006844
https://doi.org/10.1109/tnano.2012.2202124
https://doi.org/10.1109/tnano.2012.2202124
Autor:
Hsuan Lin, Jen-Inn Chyi, Wen-Hao Chang, Tung Po Hsieh, Wen Yen Chen, Chia Hsien Lin, Sheng Yun Wang, Tzu Min Hsu, Ming Chih Lee, Shun-Jen Cheng
Publikováno v:
physica status solidi c. 6:860-863
We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In0.5Ga0.5As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3c9944be83885a6c9a087df20e578b
https://doi.org/10.1002/pssc.200880623
https://doi.org/10.1002/pssc.200880623
Autor:
David M. Kuo, Hsing-Szu Chang, Tzu-Min Hsu, Wei-Sheng Liu, Wen-Yen Chen, Pei-Chin Chiu, Meng-Jie Shiau, Jen-Inn Chyi
Publikováno v:
ECS Transactions. 6:35-40
The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb64551229e9737d4b59e10a35139b26
https://doi.org/10.1149/1.2731168
https://doi.org/10.1149/1.2731168
Autor:
Tzu Min Hsu, Sheng Wei Lee, Yen Chun Chen, Ming Hao Kuo, Wen-Hao Chang, Chia Wei Chang, Pei-Wen Li, W. T. Lai
Publikováno v:
Optics letters. 40(10)
We demonstrate an effective approach to grow high-quality thin film (>1 μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, sel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6cff3a89a5f808922c626e9c679ea88
https://pubmed.ncbi.nlm.nih.gov/26393750
https://pubmed.ncbi.nlm.nih.gov/26393750
Autor:
Hung-Yao Chen, Hsin-Yi Lee, Shangjr Gwo, C.-H. Shen, H.-S. Chang, Chung Lin Wu, Tzu Min Hsu, Hway-Chi Lin, T.-F. Chuang, S.-J. Tsai
Publikováno v:
Journal of Crystal Growth. 288:247-253
By using a new double-buffer-layer (AlN/Si 3 N 4 ) technique, wurtzite-type InN(0 0 0 1) epitaxial films have been grown on Si(1 1 1) substrates by nitrogen-plasma-assisted molecular beam epitaxy. In this technique, a single crystal Si 3 N 4 layer (c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1728da43b0db15e6cf4d594f4afd9d51
https://doi.org/10.1016/j.jcrysgro.2005.12.011
https://doi.org/10.1016/j.jcrysgro.2005.12.011
Autor:
Wen Yen Chen, Pei Chin Chiu, Wen-Jeng Ho, Jen-Inn Chyi, Hsiang Szu Chang, Tung Po Hsieh, Wen-Hao Chang, Nien Tze Yeh, Tzu Min Hsu
Publikováno v:
Nanotechnology. 17:512-515
We report the preparation of low density self-assembled InGaAs on GaAs grown by metal–organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total cov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d850758d3e08e629bc15849ac07947f1
https://doi.org/10.1088/0957-4484/17/2/028
https://doi.org/10.1088/0957-4484/17/2/028
Autor:
Wen Yen Chen, Wei Hsiang Weng, Hung Sen Wei, Chih Kai Huang, Chii Chang Chen, Hsiao Tsung Lin, Chia Hua Chan, Hui Chen, Hsiang Szu Chang, Tzu Min Hsu, Wen-Hao Chang
Publikováno v:
Nanotechnology. 16:1440-1444
We propose a novel technique to fabricate a free-standing three-dimensional colloidal crystal by self-assembling the colloidal microspheres with controllable thickness from the air–liquid interface. Highly ordered three-dimensional colloidal crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dde6a39f5cca9f3e348290856914ad1
https://doi.org/10.1088/0957-4484/16/9/003
https://doi.org/10.1088/0957-4484/16/9/003
Autor:
Wen Yen Chen, Sheng Wei Lee, An Tai Chou, Wen-Hao Chang, Pan Shiu Chen, Zingway Pei, Tzu Min Hsu, Li Shyue Lai, S. C. Lu, M. J. Tsai
Publikováno v:
Applied Surface Science. 224:165-169
Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5 μm are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c433952ef1047283f0fec7d8e7b79ec6
https://doi.org/10.1016/j.apsusc.2003.08.106
https://doi.org/10.1016/j.apsusc.2003.08.106