Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Tzu Ling Liu"'
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 5, Pp n/a-n/a (2023)
Abstract Although there have been several demonstrations of area‐selective atomic layer deposition (AS‐ALD) of dielectric on dielectric in metal/dielectric patterns, the reverse process of selective dielectric on metal (DoM) is not as well develo
Externí odkaz:
https://doaj.org/article/d0da94d28d444fec9d3e53203d804b9a
Autor:
Il-Kwon Oh, Tania E. Sandoval, Tzu-Ling Liu, Nathaniel E. Richey, Chi Thang Nguyen, Bonwook Gu, Han-Bo-Ram Lee, Ralf Tonner-Zech, Stacey F. Bent
Publikováno v:
Journal of the American Chemical Society. 144:11757-11766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf75b97a14540b23f8f4bebdfeb12c9
https://doi.org/10.1021/jacs.2c03752
https://doi.org/10.1021/jacs.2c03752
Autor:
Timothy Joseph Lane, Paul Z. Cheng, Niall W. Duncan, Tzu Ling Liu, Hsin Chien Lee, Tzu Yu Hsu
Publikováno v:
Journal of Psychiatry & Neuroscience : JPN
Background: Rumination, a tendency to focus on negative self-related thoughts, is a central symptom of depression. Studying the self-related aspect of such symptoms is challenging because of the need to distinguish self effects from the emotional con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc10d7d03936e9d267f15d0f00c23658
https://doi.org/10.1503/jpn.210052
https://doi.org/10.1503/jpn.210052
Autor:
Che‐Yi Hsu, Tzu‐Ling Liu, Dong‐Han Lee, Ding‐Ruey Yeh, Yan‐Hsun Chen, Wei‐Kuang Liang, Chi‐Hung Juan
Publikováno v:
Human brain mappingREFERENCES.
The amplitude modulated (AM) neural oscillation is an essential feature of neural dynamics to coordinate distant brain areas. The AM transcranial alternating current stimulation (tACS) has recently been adopted to examine various cognitive functions,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d88732379bb460a1f282f04608b0c8e3
https://pubmed.ncbi.nlm.nih.gov/36250439
https://pubmed.ncbi.nlm.nih.gov/36250439
Publikováno v:
Chemistry of Materials. 33:3926-3935
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e4ca50ee2fcf3f47c53394d2d15f67
https://doi.org/10.1021/acs.chemmater.0c04718
https://doi.org/10.1021/acs.chemmater.0c04718
Autor:
Richard G. Closser, William Trevillyan, Tzu-Ling Liu, Stacey F. Bent, Dara Bobb-Semple, Xiaoyun Yu, Il Kwon Oh
Publikováno v:
Chemistry of Materials. 33:902-909
Area-selective deposition (ASD) of low-k materials is desired in back-end-of-line processes for fabricating nanopatterns such as fully self-aligned vias. However, the high temperature and/or aggres...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e178060ecfc51864123a5c553c74b2d1
https://doi.org/10.1021/acs.chemmater.0c03668
https://doi.org/10.1021/acs.chemmater.0c03668
Autor:
Stacey F. Bent, Tzu-Ling Liu
Publikováno v:
Chemistry of Materials. 33:513-523
Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest, but the process usually requires substrate materials with substantially different chemical properties. We introduc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d182d1aa5c79c54b8cd9baa9008180f9
https://doi.org/10.1021/acs.chemmater.0c03227
https://doi.org/10.1021/acs.chemmater.0c03227
Publikováno v:
ACS Applied Materials & Interfaces. 12:42226-42235
Monolayer and multilayer dodecanethiols (DDT) can be assembled onto a copper surface from the vapor phase depending on the initial oxidation state of the copper. The ability of the copper-bound dodecanethiolates to block atomic layer deposition (ALD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f48be9d0c333b598f2beddeb4756074c
https://doi.org/10.1021/acsami.0c08873
https://doi.org/10.1021/acsami.0c08873
Publikováno v:
Advanced Materials Interfaces. 10:2202134
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512f2188902d24cc15223b7be62983f4
https://doi.org/10.1002/admi.202202134
https://doi.org/10.1002/admi.202202134
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 37(39)
To enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers (SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The integrity of the SAM throughout the ALD process is critical to AS-ALD. Despit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a84390b18873952611ce84ead7a5802
https://pubmed.ncbi.nlm.nih.gov/34550696
https://pubmed.ncbi.nlm.nih.gov/34550696