Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Tzu Chieh Hsu"'
Publikováno v:
Materials, Vol 17, Iss 18, p 4562 (2024)
The synergic effects of activated carbon and transition metals on the hydrogenation characteristics of commercial ZK60 magnesium alloy were investigated. Severe plastic deformation was performed using equal-channel angular pressing with an internal d
Externí odkaz:
https://doaj.org/article/7b59f32f249f48ad81dedd6ac5451125
Autor:
Tzu-Chieh Hsu, 徐子絜
106
Recently, the trend of delicate Do-It-Yourself projects is gradually growing in Taiwan’s adult market, such us DIY ring, bags, wallet, virtual home decoration, etc. In kid’s market, however, it is still limited in specific application. I
Recently, the trend of delicate Do-It-Yourself projects is gradually growing in Taiwan’s adult market, such us DIY ring, bags, wallet, virtual home decoration, etc. In kid’s market, however, it is still limited in specific application. I
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/cwwzy9
Autor:
Tzu-Chieh Hsu, 徐子傑
103
The purpose of this study aims to investigate passengers’ tourism experience quality, and find the relationship among satisfaction, loyalty intention and word-of-mouth behavior base on Customer Experience’s Quality (EXQ), while discussio
The purpose of this study aims to investigate passengers’ tourism experience quality, and find the relationship among satisfaction, loyalty intention and word-of-mouth behavior base on Customer Experience’s Quality (EXQ), while discussio
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/31639991447288661242
Autor:
Tzu-chieh Hsu, 徐子傑
102
The ZK60 (Mg-5.7Zn-0.5Zr,wt%) alloy was refined by equal channel angular pressing (ECAP) with route B¬A and 12 passes. The alloy became metal filings by mechaneal method and the metal powders were prepared by adding 5wt% carbon and various
The ZK60 (Mg-5.7Zn-0.5Zr,wt%) alloy was refined by equal channel angular pressing (ECAP) with route B¬A and 12 passes. The alloy became metal filings by mechaneal method and the metal powders were prepared by adding 5wt% carbon and various
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/20032163944035473767
Publikováno v:
Solid-State Electronics. 43:809-814
Good-quality In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 layers lattice-matched to GaAs0.69P0.31 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of an optimum growth condition, we can obtain the undope
Autor:
Kun Yu Lai, Tzu Chieh Hsu, Jui-Hung Yeh, Schang Jing Hon, M. L. Tsai, Te Yuan Chung, J. H. Liao
Publikováno v:
Optics express. 21(22)
High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally
Autor:
Tzu-Chieh Hsu, 徐子傑
96
Anemonefish has become one of the hottest species in sea water aquarium in recent years. The study was conducted to determine the optimal dietary protein and lipid levels on growth performance and feed utilization of yellowtail clownfish. In
Anemonefish has become one of the hottest species in sea water aquarium in recent years. The study was conducted to determine the optimal dietary protein and lipid levels on growth performance and feed utilization of yellowtail clownfish. In
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/91001265873474819562
Autor:
Ray-Hua Horng, Chi Lu Chen, Tzu Chieh Hsu, Shih I. Chen, Ming Chun Tseng, Yu Ren Peng, Nan Kai Lai
Publikováno v:
Optics Express. 22:A1862
A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) transparent conductive layer directly deposited on a GaP window layer, without usi
Autor:
Ai Sen Liu, Parvaneh Ravadgar, Yi-Ming Chen, Tzu Chieh Hsu, Sing Ping Wang, Dong-Sing Wuu, Tzong-Ming Wu, Jr-Hau He, Ray-Hua Horng, Chi Feng Weng, Tsung Hsien Yang, Bing Rui Wu
Publikováno v:
Optics Express. 21:19668
High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with dot-patterned GaAs contact layer and surface rough structure are presented in this article. Initial LED structure of p-GaP/AlGaInP/GaAs is epitaxially grown using metal org