Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Tzu–Kun Ku"'
Autor:
Tzu-Kun Ku, Shyh-Shyuan Sheu, Tsai-Kan Chien, Chih-I Wu, Chang-Chia Lee, Lih-Yih Chiou, Ming-Jinn Tsai, Jing-Cian Lin
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:247-257
This paper proposes embedding 256 Kb resistive random-access memory (ReRAM) in a microcontroller unit as a data buffer for communicating with a stand-alone flash memory. In this study, the chip was manufactured using a combination of the TSMC 0.18 $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::428ff65708d064422f1dec0608f03096
https://doi.org/10.1109/jetcas.2016.2547778
https://doi.org/10.1109/jetcas.2016.2547778
Autor:
Meng-Fan Chang, Albert Lee, Pin-Cheng Chen, Chrong Jung Lin, Shyh-Shyuan Sheu, Ya-Chin King, Tzu-Kun Ku
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 5:183-193
Memristive devices have shown considerable promise for on-chip nonvolatile memory and computing circuits in energy-efficient systems. However, this technology is limited with regard to speed, power, VDDmin, and yield due to process variation in trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3902e929eea74a92134f87ad38c884
https://doi.org/10.1109/jetcas.2015.2426531
https://doi.org/10.1109/jetcas.2015.2426531
Autor:
Ming-Jer Kao, Meng-Fan Chang, Che-Ju Yeh, Pei-Ling Tseng, Shyh-Shyuan Sheu, Chia-Chen Kuo, Li-Yue Huang, Ming-Jinn Tsai, Yu-Sheng Chen, Ting-Chin Yang, Frederick T. Chen, Tzu-Kun Ku, Tun-Fei Chien, Shu-Meng Yang
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 62:80-84
Memristor devices are promising as high-density computing logic for non-high-speed normally off applications using heterogeneous technologies. This brief proposes a set-triggered-parallel-reset memristor logic (STPR-ML)-based on back-end-of-line-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1066c5b48dab7667e42b90b4e8b97bc4
https://doi.org/10.1109/tcsii.2014.2362713
https://doi.org/10.1109/tcsii.2014.2362713
Autor:
Shyh-Shyuan Sheu, Ming-Jinn Tsai, Yue-Der Chih, Jui-Jen Wu, Ya-Chin King, Meng-Fan Chang, Frederick T. Chen, Chia-Chen Kuo, Tzu-Kun Ku, Chorng-Jung Lin
Publikováno v:
IEEE Journal of Solid-State Circuits. 49:908-916
The design of resistive RAM (ReRAM) faces two major challenges: 1) cell area versus write current requirements and 2) cell read current (ICELL) versus read disturbance. This paper proposes ReRAM macros using logic-process-based vertical parasitic-BJT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a758ca387158944e350cf67886ce0f7
https://doi.org/10.1109/jssc.2013.2297417
https://doi.org/10.1109/jssc.2013.2297417
Autor:
Zhe-Hui Lin, Hiroyuki Yamauchi, Chih-Sheng Lin, Tzu-Kun Ku, Cha-Hsin Lin, Ming-Pin Chen, Meng-Fan Chang, Shyh-Shyuan Sheu, Wei-Cheng Wu, Yen-Huei Chen
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:1521-1529
TSV-based 3D die-stacking technology enables the reuse of pre-designed, pre-tested logic dies stacked with multiple memory layers (NSTACK) in various configurations to form a universal-memory-capacity platform (UMCP). However, conventional 3D memorie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d205024cfb224cec5e3148af2c8b03
https://doi.org/10.1109/jssc.2013.2253413
https://doi.org/10.1109/jssc.2013.2253413
Autor:
C. C. Wang, S. C. Chen, C. C. Chen, Y. H. Chang, Y. C. Hsin, P. J. Tzeng, T. C. Hsu, Tzu-Kun Ku, E. H. Chen, J. C. Chen, S. C. Liao, Y. M. Lin, C. H. Lin, P. C. Chang
Publikováno v:
ECS Transactions. 52:3-6
TSV based 3D stacking IC technology has been aggressively studied recently because of strong benefits in terms of significantly form factor shrinkage, superior system performance (bandwidth & speed), great power reduction, and heterogeneous integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f0bfd97bf05ff803c6244b15d02c20
https://doi.org/10.1149/05201.0003ecst
https://doi.org/10.1149/05201.0003ecst
Autor:
Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Tai-Yuan Wu, Z.H. Lin, S. Z. Rahaman, Ming-Jinn Tsai, Kan-Hsueh Tsai, Shyh-Shyuan Sheu, Pei-Yi Gu, Frederick T. Chen, P.L. Tseng, Yu-Sheng Chen, Tzu-Kun Ku, H. Y. Lee, C.H. Lin, W.P. Lin
Publikováno v:
ECS Transactions. 52:39-44
Consumer gadgets make up the fastest growing market for electronic devices today. These products will rely more and more on embedded storage-type memory, which can store system and processing data without impacting standby power consumption. For embe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4906dc3e3206b10caa6e2e0ae6f79b
https://doi.org/10.1149/05201.0039ecst
https://doi.org/10.1149/05201.0039ecst
Autor:
Chia-Chen Kuo, Chen-Hsin Lien, Heng-Yuan Lee, Ming-Jinn Tsai, Meng-Fan Chang, Shyh-Shyuan Sheu, Frederick T. Chen, Tzu-Kun Ku, Keng-Li Su, Yu-Sheng Chen, Yih-Shan Yang, Ku-Feng Lin, Ming-Jer Kao, Pi-Feng Chiu, Che-Wei Wu
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:878-891
ReRAM is a promising next-generation nonvolatile memory (NVM) with fast write speed and low-power operation. However, ReRAM faces two major challenges in read operations: 1) low read yield due to wide resistance distribution and 2) the requirement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b2a028d8b86979d82e61db8328ea160
https://doi.org/10.1109/jssc.2012.2230515
https://doi.org/10.1109/jssc.2012.2230515
Autor:
Shyh-Shyuan Sheu, Tsai-Kan Chien, Tzu-Kun Ku, Ming-Jinn Tsai, Heng-Yuan Li, Pei-Hua Wang, Chih-I Wu, Lih-Yih Chiou, Yao-Chun Chuang
Publikováno v:
ISCAS
Normally-off computing (NoC) is one of promising techniques that benefits microsystems with long sleep time. Because NoC can turn off power to achieve zero power consumption and can activate microsystems instantly. This study proposes a novel resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54924d31a7e13fcae2835117eadffe6d
https://doi.org/10.1109/iscas.2016.7539175
https://doi.org/10.1109/iscas.2016.7539175
Autor:
S. Z. Rahaman, Pan-Shiu Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Yu-Sheng Chen, Heng-Yuan Lee, Frederick T. Chen, Tzu-Kun Ku, Po-Tsung Tu, Pei-Hua Wang, Ming-Jinn Tsai, Chien-Hua Hsu, Wei-Su Chen, Yu-De Lin
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Resistive switching memories (RRAM or ReRAM) based on transition metal oxides (TMOs) have been widely investigated as a future nonvolatile memory (NVM) candidate with encouraging potential to serve both embedded and standalone applications, due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf90d686df8190c9aa751b3ed233a8a8
https://doi.org/10.1109/vlsi-tsa.2016.7480495
https://doi.org/10.1109/vlsi-tsa.2016.7480495