Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tzu‐Ang Chao"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng, Chao-Kai Wen, H.-S. Philip Wong, Shuangyuan Pan, Rongtan Li, Tzu-Ang Chao, Wei-Chen Chueh, Yanfeng Zhang, Qiang Fu, Boris I. Yakobson, Wen-Hao Chang, Lain-Jong Li
Publikováno v:
Nature. 579(7798)
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23bb6fcfb760ecce3ce395be92f6e385
https://pubmed.ncbi.nlm.nih.gov/32132712
https://pubmed.ncbi.nlm.nih.gov/32132712