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pro vyhledávání: '"Tzong-Liang Chen"'
Autor:
Tzong-Liang Chen, 陳宗良
90
A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s
A novel SCR-like (Silicon-Controlled Rectifier) device, called tunable holding voltage SCR device, for latchup-free and on-chip protection against electrostatic discharge (ESD) stress at output pad of LCD driver is presented. This device’s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/81601514683119457603
Autor:
Chien-Chung Hung, Yao-Feng Huang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Chwan-Ying Lee, Lurng-Shehng Lee
Publikováno v:
Materials Science Forum. 897:533-536
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e27bcec5d554605826be314caa2cc1
https://doi.org/10.4028/www.scientific.net/msf.897.533
https://doi.org/10.4028/www.scientific.net/msf.897.533
Autor:
Chwan-Ying Lee, Pei-Ju Chuang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Yao-Feng Huang, Lurng-Shehng Lee, Chien-Chung Hung
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) is proposed in this paper, which merged a double implanted MOSFET (DMOS) and junction barrier controlled Schottky diode (JBS) in a monolithic SiC device wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bdcd1b789f66cb2c8d24522c34b26ba
https://doi.org/10.23919/ispsd.2017.7988889
https://doi.org/10.23919/ispsd.2017.7988889