Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tzer Perng Chen"'
Publikováno v:
SPIE Proceedings.
Light extraction efficiency is important to the brightness of LEDs. In this study, various texturing and roughing schemes were formed on the surface or interface of InGaN-based LED structure grown on sapphire substrate to investigate their effects. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c2ee20ac85a174282b67fdae74dc5b
https://doi.org/10.1117/12.808458
https://doi.org/10.1117/12.808458
Publikováno v:
SPIE Proceedings.
A high brightness AlGaInP LED with a high reflectivity metal reflector structure was proposed. The AlGaInP LED layers with metal reflector is bonded to the high thermal conductivity silicon substrate by using indium as a solder. Because the light tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4696eada54f1103adda0c3002dd125b5
https://doi.org/10.1117/12.527373
https://doi.org/10.1117/12.527373
Publikováno v:
SPIE Proceedings.
Future in-house Multimedia networks, based on the IEEE 1394b standards, require low cost and robust optical transmission system in the range of 100 meter. In this paper, we presented the state of the art 650 nm micro-cavity light emitting diodes (RCL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cfbff4aeeeb650658f0f3647d6744d
https://doi.org/10.1117/12.525285
https://doi.org/10.1117/12.525285
Autor:
Tzer-Perng Chen, Tzong-Liang Tsai, Chuan-Cheng Tu, Solomon W. S. Chi, Chih-Sung Chang, Mario C. C. Hsieh
Publikováno v:
SPIE Proceedings.
Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3b5cf56557371a06f5701c2b70a803
https://doi.org/10.1117/12.504680
https://doi.org/10.1117/12.504680
Autor:
Tzer-Perng Chen, J. K. Hsu, B.-J. Lee, J. R. Deng, Ming-Jiunn Jou, C.-M. Chang, Chin-Yuan Chen, Su-Hui Hsu, J. Y. Kao
Publikováno v:
SPIE Proceedings.
The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23aac8b0930fd71996cf890e2775fbce
https://doi.org/10.1117/12.131244
https://doi.org/10.1117/12.131244
