Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tzer Peng Chen"'
Publikováno v:
physica status solidi (c). :263-266
Optical and electrical properties of InGaN/GaN multi-quantum-well (MQW) structure light-emitting diodes (LED) are systematically studied as a function of barrier thickness and Si doping of barriers. The emission energy of photoluminescence (PL) and e
Publikováno v:
IEEE Journal of Quantum Electronics. 38:1390-1394
A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W
Publikováno v:
IEEE Journal of Quantum Electronics. 34:77-83
A novel chirped multiquantum barrier (CMQB) structure was used for AlGaInP light-emitting devices. We have theoretically studied the blocking efficiency of the CMQB structure and found that the CMQB structure is more effective in blocking the electro
Publikováno v:
SPIE Proceedings.
Publikováno v:
SPIE Proceedings.
To investigate the high performance light source for high-speed plastic optical fiber (POF) communication application is important as high-speed short distance communication for the home networks becomes popular. It is straightforward to reduce the s
Autor:
Chih Lih Chiang, Yan-Kuin Su, Tzer Peng Chen, Tzong Liang Tsai, Chih Sung Chang, Kuo Hsin Huang, Shoou-Jinn Chang, Chung Ying Chang
Publikováno v:
Applied Physics Letters. 78:312-313
A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that m
Publikováno v:
IEEE Journal of Quantum Electronics; Oct2002, Vol. 38 Issue 10, p1390, 5p, 3 Black and White Photographs, 1 Diagram, 5 Graphs