Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Tzeng Tsong Wu"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:426-431
GaN-based photonic crystal (PC) surface emitting lasers with different lattice types including hexagonal, square, and honeycomb lattice were fabricated and characterized. Laser characteristics including threshold conditions, lasing spectra, polarizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4dea0d19cf7a8fbb16b9e0c7cad38ab
https://doi.org/10.1109/jstqe.2014.2358086
https://doi.org/10.1109/jstqe.2014.2358086
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 18:1629-1635
In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01504c5044ea73c4d018d6d0e1880070
https://doi.org/10.1109/jstqe.2011.2169237
https://doi.org/10.1109/jstqe.2011.2169237
Autor:
Chien-Kang Chen, Tzeng-Tsong Wu, Shing-Chung Wang, Chien-Chung Lin, Tien-Chang Lu, Y. F. Wu, Hao-Chung Kuo
Publikováno v:
Journal of Lightwave Technology. 29:3757-3763
We fabricated and measured GaN-based resonant cavity light-emitting diodes with a 30 nm thick Indium tin oxide (ITO) thin film as a transparent contact layer. Four different ITO structures on p-type GaN samples were deposited by sputter and e-gun, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8268e41819926c01475a4cacdb1313d8
https://doi.org/10.1109/jlt.2011.2172916
https://doi.org/10.1109/jlt.2011.2172916
Autor:
Hao-Chung Kuo, Shing-Chung Wang, Zhen-Yu Li, Chun-Yen Chang, Po-Min Tu, Chien-Kang Chen, Tzeng-Tsong Wu, Shih-Wei Chen, Hsiao-Wen Zan, Cheng-Hung Chen, Tien-Chang Lu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1594-1602
This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7de6a64b691b44d1695076602044bc
https://doi.org/10.1109/jstqe.2011.2116771
https://doi.org/10.1109/jstqe.2011.2116771
Autor:
Che-Wei Tsao, Tzeng Tsong Wu, Tsung Sheng Kao, Jyun Hao Lin, Shing Chung Wang, Shyh-Jer Huang, Yan-Kuin Su, Tien-Chang Lu, Da-Wei Lin, Hao-Chung Kuo
Publikováno v:
SPIE Proceedings.
In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence ( -PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb12fc20b567c2c292ee194e4b3b839
https://doi.org/10.1117/12.2078577
https://doi.org/10.1117/12.2078577
Publikováno v:
Optics express. 22(3)
We demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumpin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::007d57d7963afa1330784c7f4e1102db
https://pubmed.ncbi.nlm.nih.gov/24663524
https://pubmed.ncbi.nlm.nih.gov/24663524
Publikováno v:
SPIE Proceedings.
GaN-based surface-emitting lasers (SELs) using high contrast grating (HCG) with AlN/GaN distributed Bragg reflectors were reported. The laser device achieved a threshold energy density of about 0.56 mJ/cm 2 and the lasing wavelength was at 393.6 nm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::273ac1e398221a5e81331f753e192a7e
https://doi.org/10.1117/12.2042064
https://doi.org/10.1117/12.2042064
Publikováno v:
SPIE Proceedings.
GaN-based high contrast grating surface-emitting lasers (HCG SELs) with AlN/GaN distributed Bragg reflectors were reported. The device exhibited a low threshold pumping energy density of about 0.56 mJ/cm 2 and the lasing wavelength was at 393.6 nm wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b7a98595340033015ddff95def1b77
https://doi.org/10.1117/12.2002911
https://doi.org/10.1117/12.2002911
Publikováno v:
CLEO: 2013.
Blue GaN-based surface-emitting lasers incorporating a sub-wavelength high contrast grating were reported. The laser characteristics such as threshold energy, degree of polarization and divergence angle were measured to be 0.56 mJ/cm2, 73% and 12°.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88764c94fbc0760beb3feea73556b357
https://doi.org/10.1364/cleo_qels.2013.jth2a.106
https://doi.org/10.1364/cleo_qels.2013.jth2a.106
Autor:
Tzeng-Tsong Wu, S. C. Wang, H. C. Kuo, Chiao Yun Chang, Yu-Pin Lan, Che Wei Tsao, S.Y. Lo, Huei Min Huang, Tien-Chang Lu
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044cb318c12afe9cdac4fc8f14a6b842
https://doi.org/10.7567/ssdm.2013.ps-7-14
https://doi.org/10.7567/ssdm.2013.ps-7-14