Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Tze-Ching Fung"'
Autor:
Yaoling Pan, Cheonhong Kim, Jian Ma, Tallis Young Chang, Bing Wen, Edward Keat Leem Chan, Shen-ge Wang, Tze-Ching Fung, John Hyunchul Hong
Publikováno v:
Journal of Microelectromechanical Systems. 26:143-157
The single mirror interferometric MEMS display is a full-color, daylight-visible, video-rate reflective display with high brightness that consumes power only during content updates. It consists of an array of identical pixels each of which can produc
Publikováno v:
Journal of Applied Physics; Oct2010, Vol. 108 Issue 7, p074518, 10p, 1 Diagram, 3 Charts, 10 Graphs
Publikováno v:
Solid-State Electronics. 120:25-31
We investigated the electrical properties and stability of short-channel half-Corbino amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). In the linear region, the fabricated half-Corbino a-IGZO TFT with a channel length of 4.5 μm achi
Autor:
E.K. Chan, Cheonhong Kim, Tze-Ching Fung, Yaoling Pan, John H. Hong, Shen-ge Wang, Jian Ma, Tallis Y. Chang, Bing Wen
Publikováno v:
Journal of Microelectromechanical Systems. 26:464-465
In the above paper [1] , Figs. 1 – 3 , 10 , 15 , 28 , and 30 – 31 were inadvertently printed in black and white. The color figures are as follows.
Publikováno v:
Sensors and Actuators A: Physical. 158:280-283
Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) cir
Publikováno v:
Journal of Display Technology. 5:452-461
Bias-temperature-stress (BTS) induced electrical instability of the RF sputter amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) was investigated. Both positive and negative BTS were applied and found to primarily cause a positive and negati
Publikováno v:
2013 IEEE International Electron Devices Meeting.
In this paper, for the first time, we report on high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) based passive pixel sensor (PPS) and active pixel sensor (APS) circuits. Experimental results show that single-TFT PPS with a
Publikováno v:
2008 Device Research Conference.
This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inver
Publikováno v:
IEEE Custom Integrated Circuits Conference 2006; 2006, p571-574, 4p
Publikováno v:
2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper explores a 3-electrode micromachined Geiger counter utilizing a high impedance (floating) electrode to control discharge energy, and its impact on sensitivity and response time. Permanent magnets in a sandwich configuration are used to enh