Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Tze-Chiang Chen"'
Autor:
Tze-Chiang Chen, 陳自強
94
In this thesis, the metal-insulator-silicon diode using a high dielectric constant material (HfO2 or Hf-silicate) is studied for optical and electrical properties. First, the external quantum efficiency for light emission at room temperature
In this thesis, the metal-insulator-silicon diode using a high dielectric constant material (HfO2 or Hf-silicate) is studied for optical and electrical properties. First, the external quantum efficiency for light emission at room temperature
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/51203252254978726858
Autor:
Vamsi Paruchuri, Nestor A. Bojarczuk, Eduard A. Cartier, Barry Linder, Stephen L. Brown, Yanfeng Wang, Tze-Chiang Chen, Matthew Copel, Vijay Narayanan, Supratik Guha
Publikováno v:
Microelectronic Engineering. 84:1853-1856
Continued miniaturization of the different physical elements of a Si MOSFET required in order to attain higher transistor performance and greater economies of scale have spurred the need for significant materials innovations. This is most apparent in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662d4c3d1d38d579e1ebe367d714778e
https://doi.org/10.1016/j.mee.2007.04.079
https://doi.org/10.1016/j.mee.2007.04.079
Autor:
Chih-Hung Tseng, Chee-Wee Liu, Mei-Hsin Chen, Ming-Han Liao, Tze Chiang Chen, Chih-I Wu, Cheng-Yi Peng, Pei-Jer Tzeng, Ming-Yau Chern
Publikováno v:
IEEE Transactions on Electron Devices. 54:759-766
The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0321030f18bf909b6595154060b7c2
https://doi.org/10.1109/ted.2007.892012
https://doi.org/10.1109/ted.2007.892012
Autor:
Huai-Yu Cheng, Sangbum Kim, Erh-Kun Lai, T.H. Su, H.L. Lung, W. S. Khwa, Roger W. Cheek, Jau-Yi Wu, Matthew J. BrightSky, Sheng-Chih Lai, Wei-Chih Chien, Ming-Hsiu Lee, Yu Zhu, Tien-Yen Wang, C. Lam, Hongmei Li, Tze-chiang Chen, M.L. Wei
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
Multi-level-cell (MLC) is a critical technology to achieve low bit cost for phase change memory. However, resistance drift is an intrinsic material property that kills memory window and imposes formidable challenges for MLC. In this work, we report a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6c7838990869184e063d909ebc3fcc
https://doi.org/10.1109/vlsit.2015.7223706
https://doi.org/10.1109/vlsit.2015.7223706
Autor:
Tien-Yen Wang, Yu Zhu, Ming-Hsiu Lee, Matthew J. BrightSky, Erh-Kun Lai, Hongmei Li, Tze-chiang Chen, Roger W. Cheek, H.L. Lung, Y.Y. Chen, W. S. Khwa, C. Lam, H. C. Lu, Jau-Yi Wu, Huai-Yu Cheng
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Conventional phase change memory (PCM) stores information in amorphous/crystalline states that can be read out as HRS/LRS. In this work we report a radically different mode of storage that can concurrently and independently work with the conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49963429bf03574acc3cf050ef0269b5
https://doi.org/10.1109/vlsit.2014.6894382
https://doi.org/10.1109/vlsit.2014.6894382
Autor:
James B. Hannon, Ning Li, Tze-Chiang Chen, George S. Tulevski, Shu-Jen Han, Devendra K. Sadana, Satoshi Oida
Publikováno v:
Nature Communications. 4
Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbd6cbf8e427aa1227a4ef904a39c6f0
https://doi.org/10.1038/ncomms3294
https://doi.org/10.1038/ncomms3294
Autor:
Maha M. Khayyat, Devendra K. Sadana, Tze-Chiang Chen, Brent A. Wacaser, Frances M. Ross, Mark C. Reuter
Publikováno v:
Nanotechnology. 24(23)
We describe a new approach for achieving controlled spatial placement of VLS-grown nanowires that uses an oxygen-reactive seed material and an oxygen-containing mask. Oxygen-reactive seed materials are of great interest for electronic applications, y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15487487b3f8c1c56c049ec748a1a004
https://pubmed.ncbi.nlm.nih.gov/23670339
https://pubmed.ncbi.nlm.nih.gov/23670339
Autor:
Klaus Schruefer, Anastasios A. Katsetos, Chih-Yung Lin, Terence B. Hook, Fu Tai Liou, Nivo Rovedo, Jen-Kon Chen, Zhijian Yang, Tze Chiang Chen, C.H. Liu, Ming T. Lee, Y.T. Loh, C. Wann
Publikováno v:
Japanese Journal of Applied Physics. 41:2423-2425
The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2606692d36ef765152781bec0b39c8d
https://doi.org/10.1143/jjap.41.2423
https://doi.org/10.1143/jjap.41.2423
Autor:
Tze-chiang Chen
Publikováno v:
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.
The continuous scaling of CMOS technology has enabled system performance to double every two years for the past 40 years. However, new classes of applications will demand a much faster rate of improvement such as 2x/year in order to reach exaflop cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42ab3ecd4f245d0000c43034b12c2e5
https://doi.org/10.1109/vtsa.2010.5488971
https://doi.org/10.1109/vtsa.2010.5488971
Autor:
Tze-chiang Chen
Publikováno v:
ESSCIRC
The continuous and systematic increase in transistor density and performance, as described in “Moore's Law” [1] and guided by CMOS scaling theory [2], has been remarkably successful for the development of silicon technology for the past 40 years.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d43150285d646a16d8d8369dd27b544
https://doi.org/10.1109/esscirc.2009.5325955
https://doi.org/10.1109/esscirc.2009.5325955