Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Tyurnina, A. V."'
Autor:
Kaur, Amanpreet, Morton, Justin A., Tyurnina, Anastasia V., Priyadarshi, Abhinav, Ghorbani, Morteza, Mi, Jiawei, Porfyrakis, Kyriakos, Eskin, Dmitry G., Tzanakis, Iakovos
Publikováno v:
In Ultrasonics Sonochemistry August 2024 108
Autor:
Molas, Maciej R., Tyurnina, Anastasia V., Zólyomi, Viktor, Ott, Anna K., Terry, Daniel J., Hamer, Matthew J., Yelgel, Celal, Babiński, Adam, Nasibulin, Albert G., Ferrari, Andrea C., Fal'ko, Vladimir I., Gorbachev, Roman
Publikováno v:
Faraday Discussions 227, 163 (2021)
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers o
Externí odkaz:
http://arxiv.org/abs/2003.03336
Autor:
Hamer, Matthew, Zultak, Johanna, Tyurnina, Anastasia V., Zólyomi, Viktor, Terry, Daniel, Barinov, Alexei, Garner, Alistair, Donoghue, Jack, Rooney, Aidan P., Kandyba, Viktor, Giampietri, Alessio, Graham, Abigail J., Teutsch, Natalie C., Xia, Xue, Koperski, Maciej, Haigh, Sarah J., Fal'ko, Vladimir I., Gorbachev, Roman, Wilson, Neil R.
Publikováno v:
ACS Nano, 2019, 13, pp 2136-2142
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4]
Externí odkaz:
http://arxiv.org/abs/1901.06943
Autor:
Gopinadhan, K., Hu, S., Esfandiar, A., Lozada-Hidalgo, M., Wang, F. C., Yang, Q., Tyurnina, A. V., Keerthi, A., Radha, B., Geim, A. K.
Publikováno v:
Science 363, 145-148 (2019)
It has long been an aspirational goal to create artificial structures that allow fast permeation of water but reject even the smallest hydrated ions, replicating the feat achieved by nature in protein channels (e.g., aquaporins). Despite recent progr
Externí odkaz:
http://arxiv.org/abs/1811.09227
Autor:
Terry, Daniel J., Zólyomi, Viktor, Hamer, Matthew, Tyurnina, Anastasia V., Hopkinson, David G., Rakowski, Alexander M., Magorrian, Samuel J., Clark, Nick, Andreev, Yuri M., Kazakova, Olga, Novoselov, Konstantin, Haigh, Sarah J., Fal'ko, Vladimir I., Gorbachev, Roman
Publikováno v:
2D Mater. 5 041009, 2018
Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic applications. Amon
Externí odkaz:
http://arxiv.org/abs/1810.01838
Autor:
Tyurnina, Anastasia V., Morton, Justin A., Kaur, Amanpreet, Mi, Jiawei, Grobert, Nicole, Porfyrakis, Kyriakos, Tzanakis, Iakovos, Eskin, Dmitry G.
Publikováno v:
In Carbon 25 March 2023 206:7-15
Autor:
Morton, Justin A., Khavari, Mohammad, Qin, Ling, Maciejewska, Barbara M., Tyurnina, Anastasia V., Grobert, Nicole, Eskin, Dmitry G., Mi, Jiawei, Porfyrakis, Kyriakos, Prentice, Paul, Tzanakis, Iakovos
Publikováno v:
In Materials Today October 2021 49:10-22
Autor:
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zolyomi, V., Morozov, S. V., Kumar, R. Krishna, Gorbachev, R. V., Kudrynskyi, Z. R., Pezzini, S., Kovalyuk, Z. D., Zeitler, U., Novoselov, K. S., Patane, A., Eaves, L., Grigorieva, I. V., Fal'ko, V. I., Geim, A. K., Cao, Y.
Publikováno v:
Nature Nanotechnology 12, 223-227 (2016)
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement a
Externí odkaz:
http://arxiv.org/abs/1608.08950
Autor:
Tyurnina, Anastasia V., Tzanakis, Iakovos, Morton, Justin, Mi, Jiawei, Porfyrakis, Kyriakos, Maciejewska, Barbara M., Grobert, Nicole, Eskin, Dmitry G.
Publikováno v:
In Carbon 30 October 2020 168:737-747
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