Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method

Autor: Racka-Szmidt, K., Tymicki, E., Raczkiewicz, M., Sar, J., Wejrzanowski, T., Grasza, K.

Publikováno v: In Journal of Crystal Growth 15 May 2022 586

Growth of SiC by PVT method with different sources for doping by a cerium impurity, CeO2 or CeSi2

Autor: Racka, K., Tymicki, E., Grasza, K., Jakieła, R., Pisarek, M., Surma, B., Avdonin, A., Skupiński, P., Krupka, J.

Publikováno v: In Journal of Crystal Growth 1 September 2014 401:677-680

Growth of SiC by PVT method in the presence of cerium dopant

Autor: Racka, K., Tymicki, E., Grasza, K., Kowalik, I.A., Arvanitis, D., Pisarek, M., Kościewicz, K., Jakieła, R., Surma, B., Diduszko, R., Teklińska, D., Mierczyk, J., Krupka, J.

Publikováno v: In Journal of Crystal Growth 15 August 2013 377:88-95

Investigation of SiC crystals by means of synchrotron topography

Autor: Wierzchowski, W., Wieteska, K., Malinowska, A., Wierzbicka, E., Grasza, K., Tymicki, E., Balcer, T., Pawlowska, M., Graeff, W.

Publikováno v: Synchrotron Rad. in Nat. Sci. 5(3), 240-243 (2006).
8th International School and Symposium on Synchrotron Radiation in Natural Sciences, ISSRNS-2006, Zakopane, Poland, 2007-06-12-2007-06-17

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1108::bef4bbd5785f3bcbddfe9c9f4b51ed06
https://bib-pubdb1.desy.de/record/83987

Numerical Design of SiC Bulk Crystal Growth for Electronic Applications.

Autor: Wejrzanowski, T., Grybczuk, M., Tymicki, E., Kurzydlowski, K. J.

Publikováno v: AIP Conference Proceedings; 2014, Vol. 1618, p855-858, 4p, 1 Diagram, 1 Chart, 1 Graph