Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tyler Lowrey"'
Autor:
Carl Schell, J. Reed, W. Hunks, Stephen J. Hudgens, Charles H. Dennison, Regino Sandoval, W. Li, Tyler Lowrey, J. Fournier, J. F. Zheng, Wolodymyr Czubatyj
Publikováno v:
IEEE Electron Device Letters. 31:999-1001
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstr
Publikováno v:
IEEE Electron Device Letters. 31:869-871
Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophas
Autor:
J. Cleary, Carl Schell, J. Reed, W. Hunks, P. Chen, Stephen J. Hudgens, Jim Ricker, W. Li, Tyler Lowrey, Regino Sandoval, Wolodymyr Czubatyj, Charles H. Dennison, J. F. Zheng
Publikováno v:
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.
MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high pe
Autor:
Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Publikováno v:
MRS Proceedings. 1160
We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposit
Autor:
A. Spandre, Fabio Pellizzer, Giulio Casagrande, Tyler Lowrey, S. Cadeo, Paola Zuliani, R. Piva, Roberto Bez, M. Scaravaggi, F. Ottogalli, Enrico Varesi, Marina Tosi, A. Lacaita, T. Marangon, A. Benvenuti, Paolo Cappelletti, P. Besana, R. Morandi, R. Zonca, M. Magistretti, Alberto Modelli, Agostino Pirovano
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new /spl mu/trench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cel
Autor:
Stephen J. Hudgens, Sergey A. Kostylev, Tyler Lowrey, Charles H. Dennison, Guy C. Wicker, Wally Czubatyj
Publikováno v:
MRS Proceedings. 803
Phase change memory devices were originally reported by S. R. Ovshinsky [1] in 1968. A 256-bit phase-change memory array based on chalcogenide materials was reported in 1970 [2], Recent advances in phase change materials, memory device designs, and p
Autor:
Zia Karim, Lin Yang, Jerry Mack, Ming Liu, Ulrich Weber, Peter Baumann, Sasangan Ramanathan, Brian Lu, Wally Czubatyj, Stephen Hudgens, Tyler Lowrey
Publikováno v:
ECS Meeting Abstracts. :2808-2808
not Available.