Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Ty McNutt"'
Autor:
Shamar Christian, Jonathan Hayes, Brett Sparkman, Ausitn Curbow, Ty McNutt, Juan Carlos Balda
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5711733de4e230831aa217b6ee66007
https://doi.org/10.1109/apec43580.2023.10131522
https://doi.org/10.1109/apec43580.2023.10131522
Autor:
Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Jonathan Hayes, Stephen Minden, Daniel Martin, David Simco
Publikováno v:
Materials Science Forum. 924:883-886
This paper extends a previously presented SiC power module design philosophy to critical, higher-level components for increased system performance, namely the DC bussing and DC link capacitor design. The DC bussing is essential to connect the DC bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48299596964453dd65ef7d5de9c4d453
https://doi.org/10.4028/www.scientific.net/msf.924.883
https://doi.org/10.4028/www.scientific.net/msf.924.883
Autor:
Brice McPherson, Tim Foster, Sayan Seal, Marcelo Schupbach, Lauren E. Kegley, Brandon Passmore, Robert Shaw, Ty McNutt
Publikováno v:
2019 IEEE International Workshop on Integrated Power Packaging (IWIPP).
Power cycling is an accelerated reliability test used to induce package-related failure mechanisms through exposure to cyclic thermal and electrical stress. As SiC devices continue to grow in adoption for high power density, high efficiency applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5de1c773bf3e35067d4f31a41c227d6
https://doi.org/10.1109/iwipp.2019.8799100
https://doi.org/10.1109/iwipp.2019.8799100
Autor:
Brandon Passmore, Robert Shaw, Ty McNutt, Jeff B. Casady, David Simco, Kraig Olejniczak, Tom Flint, Ajith Wijenayake, Brett Hull, Daniel Martin, Austin Curbow
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94108951cf871dc0a931a7c4b6a914d
https://doi.org/10.1109/wipda.2017.8170569
https://doi.org/10.1109/wipda.2017.8170569
Autor:
Brandon Passmore, Matthew Feurtado, Alex Lostetter, David Simco, Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Stephen Minden, Daniel Martin
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and abili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedf91fe5a75c1db37269c0e5b631d6a
https://doi.org/10.1109/ecce.2017.8095886
https://doi.org/10.1109/ecce.2017.8095886
Autor:
Kraig Olejniczak, Ajith Wijenayake, H. Alan Mantooth, Ty McNutt, Alex Lostetter, Brandon Passmore, Jonathan Hayes, Yusi Liu
Publikováno v:
2017 IEEE Electric Ship Technologies Symposium (ESTS).
The Navy's Next Generation Integrated Power System (NGIPS) Technology Development Roadmap establishes Medium Voltage DC (MVDC) Integrated Power System (IPS) technology in future warships. This requires a higher medium voltage (MV)-rated power device,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191009fd371611a30f069b00dd168352
https://doi.org/10.1109/ests.2017.8069343
https://doi.org/10.1109/ests.2017.8069343
Publikováno v:
2017 IEEE International Workshop On Integrated Power Packaging (IWIPP).
This paper presents a comparison of Miller clamp implementations for a high-performance SiC MOSFET half-bridge power module. The objective of this work is to demonstrate the optimal location and layout of a Miller clamp to minimize false turn-on beha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e547d4c01a6549515b24c246ca360d
https://doi.org/10.1109/iwipp.2017.7936765
https://doi.org/10.1109/iwipp.2017.7936765
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents a comparison of the inductive switching losses between a 1200 V SiC MOSFET half bridge power module with anti-parallel SiC Schottky barrier diodes (SBD) versus the same power module package utilizing only the intrinsic body diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2658fdeba070b7658930f60e29148a
https://doi.org/10.1109/apec.2017.7931020
https://doi.org/10.1109/apec.2017.7931020
Autor:
R. Shaw, Ty McNutt, Kenny George, David Simco, Brandon Passmore, B. McGee, S. Storkov, Kraig Olejniczak, W. Austin Curbow, T. Flint
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
Wide bandgap materials are having a transformational impact on the electrical, thermal, and mechanical performance of military, industrial, and commercial power electronic systems where silicon (Si) power semiconductors are the present material techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0181b5914e285b62a6788902d8e6852c
https://doi.org/10.1109/apec.2017.7930776
https://doi.org/10.1109/apec.2017.7930776
Autor:
Robert Shaw, B. McPherson, Ty McNutt, Alex Lostetter, Brandon Passmore, Kraig Olejniczak, John R. Fraley
Publikováno v:
Journal of Electronic Materials. 43:4552-4559
APEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10 kV) blocking, high-temperature operation (>200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9381bddb09513b80904e6376b982d00
https://doi.org/10.1007/s11664-014-3376-y
https://doi.org/10.1007/s11664-014-3376-y