Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Twisha Tah"'
Autor:
Tom Mathews, Ch. Kishan Singh, Archna Sagdeo, Twisha Tah, Kishore K. Madapu, S. Amirthapandian, S. Ilango, Sitaram Dash
Publikováno v:
Materials Science in Semiconductor Processing. 80:31-37
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 °C. The pristine thin film was deposited using electron beam eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14195c9cc5aa22b954417826ede8d161
https://doi.org/10.1016/j.mssp.2018.02.015
https://doi.org/10.1016/j.mssp.2018.02.015
Publikováno v:
AIP Conference Proceedings.
The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ∼ 500 °C leading to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60da662ed72020a998516e1f2087079d
https://doi.org/10.1063/1.5028870
https://doi.org/10.1063/1.5028870
Autor:
B. K. Panigrahi, S. R. Polaki, Ch. Kishan Singh, Twisha Tah, Sitaram Dash, C. David, Kishore K. Madapu, S. Ilango
Publikováno v:
AIP Conference Proceedings.
The formation of nanocrystalline SiGe without the aid of metal induced crystallization is reported. Re-crystallization of the as-deposited poly-Ge film (deposited at 450 °C) leads to development of regions with depleted Ge concentration upon anneali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88378d44c3fac0e0205f51f1c178651b
https://doi.org/10.1063/1.4980475
https://doi.org/10.1063/1.4980475
Autor:
S. R. Polaki, D. T. Sunitha, S. K. Dash, S. Ilango, Ch. Kishan Singh, A. K. Tyagi, Twisha Tah, Kishore K. Madapu
Publikováno v:
AIP Conference Proceedings.
Aluminium (metal) induced crystallization of amorphous Ge in bilayer and multilayer Ge/Al thin films deposited on quartz substrate at temperature well below the crystallization temperature of bulk Ge is reported. The crystallization of poly-Ge procee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ada86c61e24a2d949a11846253c7ff
https://doi.org/10.1063/1.4947935
https://doi.org/10.1063/1.4947935
Autor:
Tah, Twisha, Singh, Ch. Kishan, Madapu, K. K., Polaki, S. R., Ilango, S., David, C., Dash, S., Panigrahi, B. K.
Publikováno v:
AIP Conference Proceedings; 2017, Vol. 1832 Issue 1, p1-3, 3p, 2 Diagrams, 2 Graphs
Autor:
Tah, Twisha, Singh, Ch. Kishan, Madapu, K. K., Sarguna, R. M., Magudapathy, P., Ilango, S., Singh, Biswas, Das
Publikováno v:
AIP Conference Proceedings; 2018, Vol. 1942 Issue 1, p1-1, 1p