Zobrazeno 1 - 10
of 529
pro vyhledávání: '"Tutuc, E"'
Autor:
Larentis, S., Tolsma, J. R., Fallahazad, B., Dillen, D. C., Kim, K., MacDonald, A. H., Tutuc, E.
Publikováno v:
Nano Lett. 14, 2039 (2014)
We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population.
Externí odkaz:
http://arxiv.org/abs/1402.1981
Publikováno v:
Appl. Phys. Lett. 101, 223104 (2012)
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmet
Externí odkaz:
http://arxiv.org/abs/1211.3096
Publikováno v:
Phys. Rev. B 86, 045311 (2012)
Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We compare the
Externí odkaz:
http://arxiv.org/abs/1207.0781
Publikováno v:
Phys. Rev. B 85, 201408(R) (2012)
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport
Externí odkaz:
http://arxiv.org/abs/1202.2930
Autor:
Kim, Seyoung, Jo, Insun, Dillen, D. C., Ferrer, D. A., Fallahazad, B., Yao, Z., Banerjee, S. K., Tutuc, E.
Publikováno v:
Phys. Rev. Lett. 108, 116404 (2012)
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function
Externí odkaz:
http://arxiv.org/abs/1112.5467
Publikováno v:
Nano Letters 11, 3624 (2011)
We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance s
Externí odkaz:
http://arxiv.org/abs/1108.2476
Autor:
Chiu, YenTing, Padmanabhan, Medini, Gokmen, T., Shabani, J., Tutuc, E., Shayegan, M., Winkler, R.
Publikováno v:
Phys. Rev. B 84, 155459 (2011)
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to
Externí odkaz:
http://arxiv.org/abs/1106.4608
We report studies of pinning mode resonances of magnetic field induced bilayer Wigner crystals of bilayer hole samples with negligible interlayer tunneling and different interlayer separations d, in states with varying layer densities, including uneq
Externí odkaz:
http://arxiv.org/abs/1101.2436
Publikováno v:
Phys. Rev. B 83, 161401 (2011)
Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of massless fermions in graphene. At temperatures higher than 50 K, the Coulo
Externí odkaz:
http://arxiv.org/abs/1010.2113
Autor:
Kim, Seyoung, Tutuc, E.
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state (QHS) at fill
Externí odkaz:
http://arxiv.org/abs/0909.2288