Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Tushar Thrivikraman"'
Autor:
Tushar Thrivikraman, Mark S. Haynes, David Hawkins, John Stang, Samuel Prager, Mahta Moghaddam
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 69:3789-3803
This article presents a design for implementing an ultrawideband (UWB) software-defined radar (SDRadar) using a bandwidth reconstruction technique, called frequency stacking, for a stepped frequency signal to create a synthetic wideband waveform (SWW
Autor:
Samuel Prager, Tushar Thrivikraman, Mark S. Haynes, Mahta Moghaddam, David Hawkins, John Stang
Publikováno v:
2018 IEEE Radar Conference (RadarConf18).
This paper presents a design for implementing an ultra-wideband (UWB) Software Defined Radar (SDRadar) using a bandwidth reconstruction technique for a stepped frequency signal called frequency stacking to create a synthetic wideband waveform (SWW).
Autor:
Tushar Thrivikraman
Publikováno v:
Extreme Environment Electronics ISBN: 9781315216911
Extreme Environment Electronics
Extreme Environment Electronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1ef02712df6afa6abe9b93c43012b3
https://doi.org/10.1201/b13001-79
https://doi.org/10.1201/b13001-79
Autor:
Troy D. England, Partha S. Chakraborty, Pauline Paki-Amouzou, David M. Fleischhauer, Stephen P. Buchner, Jeffrey H. Warner, Nelson E. Lourenco, Duane C. Howard, Adilson S. Cardoso, John D. Cressler, Tushar Thrivikraman, Prabir Saha, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 61:756-765
The impact of single event transients (SETs) on single-pole double-throw (SPDT) RF switch circuits designed in a commercially-available, 180 nm second-generation SiGe BiCMOS (IBM 7HP) technology is investigated. The intended application for these SPD
Autor:
John Papapolymerou, Ana M. Yepes, T. Heath, Chad E. Patterson, B. Wilson, Tushar Thrivikraman, Chris Coen, John D. Cressler
Publikováno v:
IEEE Aerospace and Electronic Systems Magazine. 28:26-39
To the author's knowledge, this work represents the first demonstration of an X-band integrated 64-element active phased-array receiver using SiGe and organic multilayer (LCP + Duroid) technologies. The design and measurement of the antenna, SiGe T/R
Autor:
S M Begley, Tushar Thrivikraman, John Papapolymerou, Swapan K. Bhattacharya, John D. Cressler, Chad E. Patterson, Ana M. Yepes
Publikováno v:
IEEE Transactions on Antennas and Propagation. 59:100-109
This paper presents for the first time an X-band antenna array with integrated silicon germanium low noise amplifiers (LNA) and 3-bit phase shifters (PS). LNAs and PSs were successfully integrated onto an 8 × 2 lightweight antenna utilizing a multil
Autor:
S.D. Phillips, A. Appaswamy, Gyorgy Vizkelethy, Robert A. Reed, Tushar Thrivikraman, Akil K. Sutton, John D. Cressler, Paul E. Dodd
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3393-3401
We investigate, for the first time, the potential for SEE mitigation of a newly-developed device architecture in a 3rd generation high-speed SiGe platform. This new device architecture is termed the ?inverse-mode cascode SiGe HBT? and is comprised of
Autor:
Edward P. Wilcox, John D. Cressler, S.D. Phillips, Laleh Najafizadeh, Martin A. Carts, Jonathan A. Pellish, Tushar Thrivikraman, Peng Cheng, Paul W. Marshall
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3318-3325
We investigate the applicability of current total ionizing dose (TID) test protocols in the context of advanced transistor technologies such as Silicon-Germanium heterojunction bipolar transistors(SiGe HBTs). In SiGe HBTs, an unexpected shift in coll
Autor:
John D. Cressler, David C. Ahlgren, Alvin J. Joseph, Tushar Thrivikraman, R. Krithivasan, Jiahui Yuan, Marwan H. Khater, Jae-Sung Rieh
Publikováno v:
IEEE Transactions on Electron Devices. 56:1007-1019
The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating temperature as an effective way of gaining a better understanding of the performance limit
Autor:
Tushar Thrivikraman, J.P. Comeau, S.D. Phillips, John D. Cressler, M.A. Morton, Peng Cheng, Paul W. Marshall, John Papapolymerou
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3246-3252
We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space-based, phased-array antennas used in radar or wireless communication systems. Both phase shifter circuits remain functional with acceptable dc and RF