Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Turutin AV"'
Autor:
Fetisov LY; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Dzhaparidze MV; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Savelev DV; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Burdin DA; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Turutin AV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kuts VV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Milovich FO; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Temirov AA; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Parkhomenko YN; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Fetisov YK; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2023 May 06; Vol. 23 (9). Date of Electronic Publication: 2023 May 06.
Autor:
Turutin AV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal., Skryleva EA; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kubasov IV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Milovich FO; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Temirov AA; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Raketov KV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia.; Mapper LLC, Volgogradsky Pr. 42 k. 5, 109316 Moscow, Russia., Kislyuk AM; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Zhukov RN; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Senatulin BR; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kuts VV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Malinkovich MD; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Parkhomenko YN; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia.; JSC ''Giredmet'', 2 Elektrodnaya Str., 111524 Moscow, Russia., Sobolev NA; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2023 Jan 04; Vol. 16 (2). Date of Electronic Publication: 2023 Jan 04.
Autor:
Omelyanchik A; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia.; Department of Chemistry and Industrial Chemistry (DCIC), University of Genova, 16146 Genova, Italy., Antipova V; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia., Gritsenko C; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia., Kolesnikova V; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia., Murzin D; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia., Han Y; Biomedical Centre, Department of Neuroscience, Uppsala University, 751 24 Uppsala, Sweden., Turutin AV; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal., Kubasov IV; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kislyuk AM; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Ilina TS; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kiselev DA; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Voronova MI; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Malinkovich MD; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Parkhomenko YN; Laboratory of Physics of Oxide Ferroelectrics and Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Silibin M; Institute of Advanced Materials and Technologies, National Research University of Electronic Technology 'MIET', 124498 Moscow, Russia.; Institute for Bionic Technologies and Engineering, I.M. Sechenov First Moscow State Medical University, 119991 Moscow, Russia.; Scientific-Manufacturing Complex 'Technological Centre' Shokin Square, House 1, Bld. 7, Zelenograd, 124498 Moscow, Russia., Kozlova EN; Biomedical Centre, Department of Neuroscience, Uppsala University, 751 24 Uppsala, Sweden., Peddis D; Department of Chemistry and Industrial Chemistry (DCIC), University of Genova, 16146 Genova, Italy.; Institute of Structure of Matter-CNR, Monterotondo Stazione, 00016 Rome, Italy., Levada K; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia., Makarova L; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia.; Faculty of Physics, Lomonosov Moscow State University, 1-2 Leninskie Gory, 119234 Moscow, Russia., Amirov A; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia.; Amirkhanov Institute of Physics of Dagestan Federal Research Center, Russian Academy of Sciences, 367003 Makhachkala, Russia., Rodionova V; REC Smart Materials and Biomedical Applications, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2021 Apr 28; Vol. 11 (5). Date of Electronic Publication: 2021 Apr 28.
Autor:
Bichurin MI; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia., Petrov RV; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia., Leontiev VS; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia., Sokolov OV; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia., Turutin AV; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal., Kuts VV; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia., Kubasov IV; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia., Kislyuk AM; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia., Temirov AA; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia., Malinkovich MD; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia., Parkhomenko YN; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2020 Dec 13; Vol. 20 (24). Date of Electronic Publication: 2020 Dec 13.
Autor:
Kholkin AL, Ushakov AD, Chuvakova MA, Kosobokov MS, Akhmatkhanov AR, Turutin AV, Chichkov MV, Kravchenko II, Kopelevich Y, Shur VY
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control [IEEE Trans Ultrason Ferroelectr Freq Control] 2020 Oct; Vol. 67 (10), pp. 2142-2147. Date of Electronic Publication: 2020 Jun 03.
Autor:
Vidal JV, Turutin AV, Kubasov IV, Kislyuk AM, Kiselev DA, Malinkovich MD, Parkhomenko YN, Kobeleva SP, Sobolev NA, Kholkin AL
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control [IEEE Trans Ultrason Ferroelectr Freq Control] 2020 Jun; Vol. 67 (6), pp. 1219-1229. Date of Electronic Publication: 2020 Jan 22.
Autor:
Vidal JV, Turutin AV, Kubasov IV, Kislyuk AM, Malinkovich MD, Parkhomenko YN, Kobeleva SP, Pakhomov OV, Sobolev NA, Kholkin AL
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control [IEEE Trans Ultrason Ferroelectr Freq Control] 2019 Sep; Vol. 66 (9), pp. 1480-1487. Date of Electronic Publication: 2019 Apr 11.
Autor:
Kubasov IV; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. kubasov.ilya@gmail.com., Kislyuk AM; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. akislyuk94@gmail.com., Turutin AV; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. aturutin92@gmail.com.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal. aturutin92@gmail.com., Bykov AS; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. xalexx1349@mail.ru., Kiselev DA; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. dm.kiselev@gmail.com., Temirov AA; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. temirov.alex@yandex.ru., Zhukov RN; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. rom_zhuk@mail.ru., Sobolev NA; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. sobolev@ua.pt.; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal. sobolev@ua.pt., Malinkovich MD; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. malinkovich@yandex.ru., Parkhomenko YN; Department of the Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia. parkh@rambler.ru.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2019 Feb 01; Vol. 19 (3). Date of Electronic Publication: 2019 Feb 01.
Autor:
Vidal JV, Turutin AV, Kubasov IV, Malinkovich MD, Parkhomenko YN, Kobeleva SP, Kholkin AL, Sobolev NA
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control [IEEE Trans Ultrason Ferroelectr Freq Control] 2017 Jul; Vol. 64 (7), pp. 1102-1119. Date of Electronic Publication: 2017 Apr 13.