Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Turtsevich, A. S."'
Autor:
Morozovsky, N. V., Semchenko, A. V., Sidsky, V. V., Kolos, V. V., Turtsevich, A. S., Eliseev, E. A., Morozovska, A. N.
The effect of changes of the Nb content and annealing on charge vs. voltage and current vs. voltage characteristics of SrBi2(Ta,Nb)2O9 film was studied theoretically and experimentally. Theoretical modeling, which takes into account the mobile charge
Externí odkaz:
http://arxiv.org/abs/1410.2799
Autor:
Poklonski, Nikolai A., Gorbachuk, Nikolay I., Shpakovski, Sergey V., Filipenia, Viktor A., Turtsevich, Arkady S., Shvedov, Sergey V., Vo Quang, Nha, Binh, Nguyen Thi Thanh, Skuratov, Vladimir A., Wieck, Andreas D.
Publikováno v:
In Modern Electronic Materials June 2016 2(2):48-50
Autor:
Turtsevich A. S., Nalivaiko O. Y.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 49-58 (2015)
Modernization of horizontal low pressure deposition system has been performed. The liquid source delivery system using the bubblers has been developed. The PSG and BPSG film deposition processes and film properties using TEOS-Dimethylphosphite-TEB sy
Externí odkaz:
https://doaj.org/article/86a70c5aa69a4966a544f9eacae0c6f5
Autor:
Pilipenko V. A., Gorushko V. A., Petlitskiy A. N., Ponaryadov V. V., Turtsevich A. S., Shvedov S. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 43-57 (2013)
Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufa
Externí odkaz:
https://doaj.org/article/aa8c54e7f1044e5481c070c762b8d02a
Autor:
Nalivaiko O. Yu., Turtsevich A. S.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 34-39 (2012)
The influence of silicon nitride deposition condition on parameters of the obtained films has been investigated. It has been found that the deposition rate of silicon nitride films decreases with deposition temperature decreasing, and at the same tim
Externí odkaz:
https://doaj.org/article/65d71d47399f46209fac2bdcc41f0925
Autor:
Turtsevich А. S., Rubtsevich I. I., Solov’yov Ya. А., Vas’kov O. S., Kononenko V. К., Niss V. S., Kerentsev А. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 44-47 (2012)
Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated. Spectra of thermal resistances were calculated from the
Externí odkaz:
https://doaj.org/article/b14573f8acc84c0c9f3f1fa8aded2fa6
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 22-26 (2012)
Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth. It has been proven that to impro
Externí odkaz:
https://doaj.org/article/36c21fd727a642058552d604b4ce6965
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 3-8 (2012)
The review summarizes development of microelectronics in the developed countries over the period of 7—10 years until 2008, when the economic crisis started to effect the global economy. The data from Stat World Fab Watch has been used in the paper.
Externí odkaz:
https://doaj.org/article/d3eaf04f518d461fa0fdad67fea80b9a
Autor:
Nalivaiko O. Yu., Turtsevich A. S.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 37-41 (2012)
The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optim
Externí odkaz:
https://doaj.org/article/d10d84628e394b688dcf483e8b963743
Autor:
Nalivaiko O. Yu., Turtsevich A. S.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 50-55 (2009)
The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction consta
Externí odkaz:
https://doaj.org/article/30eebbd8663d4a45a97d76e0f8892e63