Zobrazeno 1 - 10
of 154
pro vyhledávání: '"Turski, Henryk"'
Autor:
van Deurzen, Len, Kim, Eungkyun, Pieczulewski, Naomi, Zhang, Zexuan, Feduniewicz-Zmuda, Anna, Chlipala, Mikolaj, Siekacz, Marcin, Muller, David, Xing, Huili Grace, Jena, Debdeep, Turski, Henryk
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wa
Externí odkaz:
http://arxiv.org/abs/2404.03733
Autor:
Wolny, Paweł, Turski, Henryk, Muziol, Grzegorz, Sawicka, Marta, Smalc-Koziorowska, Julita, Moneta, Joanna, Feduniewicz-Żmuda, Anna, Grzanka, Szymon, Skierbiszewski, Czesław
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the
Externí odkaz:
http://arxiv.org/abs/2206.10296
Autor:
Sawicka, Marta, Muziol, Grzegorz, Fiuczek, Natalia, Hajdel, Mateusz, Siekacz, Marcin, Feduniewicz-Żmuda, Anna, Nowakowski-Szkudlarek, Krzesimir, Wolny, Paweł, Żak, Mikołaj, Turski, Henryk, Skierbiszewski, Czesław
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentrati
Externí odkaz:
http://arxiv.org/abs/2201.03939
Autor:
van Deurzen, Len, Ruiz, Mikel Gómez, Lee, Kevin, Turski, Henryk, Bharadwaj, Shyam, Page, Ryan, Protasenko, Vladimir, Huili, Xing, Lähnemann, Jonas, Jena, Debdeep
Publikováno v:
J. Phys. D: Appl. Phys. 54, 495106 (2021)
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence
Externí odkaz:
http://arxiv.org/abs/2106.10809
Akademický článek
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Akademický článek
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Autor:
Bharadwaj, Shyam, Miller, Jeffrey, Lee, Kevin, Lederman, Joshua, Siekacz, Marcin, Xing, Huili, Jena, Debdeep, Skierbiszewski, Czesław, Turski, Henryk
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucida
Externí odkaz:
http://arxiv.org/abs/1911.03532
Autor:
Jarema, Michał, Gładysiewicz, Marta, Janicki, Łukasz, Zdanowicz, Ewelina, Turski, Henryk, Muzioł, Grzegorz, Skierbiszewski, Czesław, Kudrawiec, Robert
Publikováno v:
Journal of Applied Physics 127, 035702 (2020)
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed
Externí odkaz:
http://arxiv.org/abs/1907.09465
Autor:
Turski, Henryk, Chlipala, Mikolaj, Zdanowicz, Ewelina, Rogowicz, Ernest, Muziol, Grzegorz, Moneta, Joanna, Grzanka, Szymon, Kryśko, Marcin, Syperek, Marcin, Kudrawiec, Robert, Skierbiszewski, Czeslaw
Publikováno v:
Journal of Applied Physics; 12/28/2023, Vol. 134 Issue 24, p1-8, 8p
Autor:
Sawicka, Marta, Gołyga, Oliwia, Fiuczek, Natalia, Muzioł, Grzegorz, Feduniewicz-Żmuda, Anna, Siekacz, Marcin, Turski, Henryk, Czernecki, Robert, Grzanka, Ewa, Prozheev, Igor, Tuomisto, Filip, Skierbiszewski, Czesław
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2023 155