Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Turkka O. Tuomi"'
Autor:
Sami Suihkonen, Andreas N. Danilewsky, Glenn Ross, Aapo Lankinen, Markku Tilli, Turkka O. Tuomi, Ville Luntinen, Mervi Paulasto-Kröckel, Mikael Broas
Publikováno v:
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).
Due to the functional limitations of SiO2 for SOI applications, alternative dielectric materials have been investigated. Alternative SOI materials in this work include, AlN and AlGaN. The dielectrics were deposited using MOCVD, and with the aid of PE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25cfda0bce379b680ad46e2e5d1fe314
https://doi.org/10.1109/estc48849.2020.9229836
https://doi.org/10.1109/estc48849.2020.9229836
Autor:
A. N. Danilewsky, Sakari Sintonen, J. Mäkinen, Henri Jussila, Markku Tilli, Turkka O. Tuomi, Pasi Kostamo, Aapo Lankinen, Harri Lipsanen
Publikováno v:
Thin Solid Films. 603:435-440
Large-area back-reflection and transmission X-ray diffraction topographs of bonded silicon-on-insulator (SOI) wafers made with synchrotron radiation allowed direct and simultaneous imaging of bonding-induced strain patterns of both the 7 μm thick (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15482070e12ef6515ddf772dec11c53b
https://doi.org/10.1016/j.tsf.2016.02.052
https://doi.org/10.1016/j.tsf.2016.02.052
Autor:
Sami Suihkonen, Romuald Stankiewicz, Tobias Schulz, Stefanie Wahl, Andreas N. Danilewsky, Martin Albrecht, Klaus Irmscher, Sakari Sintonen, Sylke Meyer, Turkka O. Tuomi, Susanne Richter
Publikováno v:
Journal of crystal growth. 456:51-57
Ammonothermally grown GaN is a promising substrate for high-power optoelectronics and electronics thanks to its scalability and high structural perfection. Despite extensive research, ammonothermal GaN still suffers from significant concentrations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19aff95f467b0eb3fa2aa9045619b0b2
https://doi.org/10.1016/j.jcrysgro.2016.08.044
https://doi.org/10.1016/j.jcrysgro.2016.08.044
Autor:
Sami Suihkonen, Turkka O. Tuomi, Harri Lipsanen, Tadao Hashimoto, Sakari Sintonen, Sierra Hoff, Edward Letts, Henri Jussila
Publikováno v:
Journal of Crystal Growth. 406:72-77
White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f324d7a6fefb37690fbd459ca250e38
https://doi.org/10.1016/j.jcrysgro.2014.08.022
https://doi.org/10.1016/j.jcrysgro.2014.08.022
Autor:
Sami Suihkonen, Harri Lipsanen, Carsten Paulmann, Markku Sopanen, Turkka O. Tuomi, Teppo Huhtio, S. Nagarajan, Henri Jussila, Aapo Lankinen, Sakari Sintonen
Publikováno v:
Thin Solid Films. 534:680-684
GaP0.98N0.02 layers having a thickness from 75 nm to 600 nm are grown on GaP substrates by metalorganic vapor phase epitaxy. Back-reflection X-ray topographs made with a synchrotron radiation of the thick GaP0.98N0.02 layers reveal images of misfit d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9a23e59a3dd2f0a0e7d36e2d45e493
https://doi.org/10.1016/j.tsf.2013.02.054
https://doi.org/10.1016/j.tsf.2013.02.054
Autor:
Markku Sopanen, Pekka Törmä, Harri Lipsanen, Muhammad Ali, Turkka O. Tuomi, Olli Svensk, Sakari Sintonen, Sami Suihkonen, Pasi Kostamo, Carsten Paulmann
Publikováno v:
physica status solidi c. 8:1524-1527
Owing to its great potential in optoelectronic devices, a lot of effort has recently been put into improving the crystal quality of heteroepitaxial GaN. In this study, GaN layers grown on patterned GaN/sapphire substrates are non-destructively invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e3e20cf42a88c3d038ea3f5be393c2
https://doi.org/10.1002/pssc.201000883
https://doi.org/10.1002/pssc.201000883
Autor:
Olli Svensk, Sami Suihkonen, Markku Sopanen, Muhammad Ali, Harri Lipsanen, Sakari Sintonen, Carsten Paulmann, Pasi Kostamo, Turkka O. Tuomi, Marcin Zajac
Publikováno v:
physica status solidi c. 9:1630-1632
In this study, homoepitaxial GaN grown on ammonothermal GaN substrates is non-destructively investigated by synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD). The homoepitaxial GaN layer was found to be of excellent crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc77c62076403585409fdd029475889b
https://doi.org/10.1002/pssc.201100693
https://doi.org/10.1002/pssc.201100693
Autor:
Juha Riikonen, Markku Sopanen, Harri Lipsanen, Henri Jussila, Markus Bosund, Päivi Mattila, Turkka O. Tuomi, Teppo Huhtio
Publikováno v:
physica status solidi c. 9:1560-1562
Near-surface InGaAs/GaAs quantum well and strain-induced InGaAs/GaAs quantum dot structures are coated with AlN by plasma-enhanced atomic layer deposition. Due to its relatively low fabrication temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7fc70aa9f30151869f4a23735435ca5
https://doi.org/10.1002/pssc.201100691
https://doi.org/10.1002/pssc.201100691
Autor:
Sami Suihkonen, M. Rudziński, Jori Lemettinen, Christoffer Kauppinen, Atte Haapalinna, Turkka O. Tuomi
Publikováno v:
Semiconductor Science and Technology. 32:045003
We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon on insulator (SOI) substrate compared to a bulk Si substrate. GaN layers were gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906235bd389afefdb63cd245becb3c5b
https://doi.org/10.1088/1361-6641/aa5942
https://doi.org/10.1088/1361-6641/aa5942
Autor:
Sakari Sintonen, Turkka O. Tuomi, Harri Lipsanen, Henri Jussila, Sami Suihkonen, Andreas N. Danilewsky, Romuald Stankiewicz
Publikováno v:
Applied Physics Express. 7:091003
The large-area defect structure of high-quality ammonothermal GaN was studied by synchrotron radiation X-ray topography (SR-XRT) and high-resolution X-ray diffraction (XRD). The threading dislocation densities of mixed and screw dislocations were det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57bbfebc2bd8147f3fb5760fc3ee734d
https://doi.org/10.7567/apex.7.091003
https://doi.org/10.7567/apex.7.091003