Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Turja Nandy"'
Publikováno v:
Micromachines, Vol 15, Iss 5, p 597 (2024)
Microelectromechanical systems (MEMS) ohmic contact switches are considered to be a promising candidate for wireless communication applications. The longevity of MEMS switches is directly related to the reliability and performance of microcontacts. I
Externí odkaz:
https://doaj.org/article/004104bb13194ab49d4f71a8e401b36a
Publikováno v:
Sensors, Vol 18, Iss 10, p 3443 (2018)
Carbon monoxide (CO) is a toxic gas, and environmental pollutant. Its detection and control in residential and industrial environments are necessary in order to avoid potentially severe health problems in humans. In this review paper, we discuss the
Externí odkaz:
https://doaj.org/article/636b54cd475247fc9fc7c4de659734f0
Publikováno v:
Phase Change Materials-Technology and Applications
Germanium telluride (GeTe) is a chalcogenide phase change material which is nonvolatile and changes its phase from amorphous state to a highly conductive crystalline state at approximately 180–230°C temperature, dropping the material’s resistivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=intech______::ec136f7427a352df9ad42384f9632983
https://mts.intechopen.com/articles/show/title/corrigendum-to-germanium-telluride-a-chalcogenide-phase-change-material-with-many-possibilities
https://mts.intechopen.com/articles/show/title/corrigendum-to-germanium-telluride-a-chalcogenide-phase-change-material-with-many-possibilities
Publikováno v:
Phase Change Materials-Technology and Applications
Phase Change Materials-Technology and Applications ISBN: 9781803564739
Phase Change Materials-Technology and Applications ISBN: 9781803564739
Germanium telluride (GeTe) is a chalcogenide phase change material which is nonvolatile and changes its phase from amorphous state to a highly conductive crystalline state at approximately 180–230°C temperature, dropping the material’s resistivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55d139e3398f61944df6bd3031def2d6
https://mts.intechopen.com/articles/show/title/germanium-telluride-a-chalcogenide-phase-change-material-with-many-possibilities
https://mts.intechopen.com/articles/show/title/germanium-telluride-a-chalcogenide-phase-change-material-with-many-possibilities
Publikováno v:
2022 IEEE 67th Holm Conference on Electrical Contacts (HLM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071aa7f9098f66feac3ce04d8011da24
https://doi.org/10.1109/hlm54538.2022.9969780
https://doi.org/10.1109/hlm54538.2022.9969780
Publikováno v:
Journal of Energy Technology Research. 1:28-38
Two dimensional electron gas (2DEG) based High Electron Mobility Transistor (HEMT) has been considered as the basic structure of the THz modulator, where three different metals, namely Ni, Zn and Al of 1 nm thickness, have been considered as the gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa3c7168f5142f6f8eb22a5455a2b66
https://doi.org/10.22496/jetr2016091480
https://doi.org/10.22496/jetr2016091480
Autor:
Manish Debnath, Turja Nandy
Publikováno v:
2019 5th International Conference on Advances in Electrical Engineering (ICAEE).
Interconnect which plays the most prominent role in the IC sector needs the maximum attention nowadays to surmount all the difficulties and complications of Cu interconnect. Carbon Nanomaterial-based interconnects are one of the propositions of resea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a354a5b950ee9e999d13ac336db7bf7
https://doi.org/10.1109/icaee48663.2019.8975507
https://doi.org/10.1109/icaee48663.2019.8975507
Publikováno v:
Electrical and Electronics Engineering: An International Journal. 4:25-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2b2e7fdd6db140756f40f1938807f4
https://doi.org/10.14810/elelij.2015.4303
https://doi.org/10.14810/elelij.2015.4303
Publikováno v:
International Journal of Advances in Materials Science and Engineering. 3:1-11
Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this revi ew, we present an in depth discussion of performances Carbon Nanotube Field E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e20622cdb3a735e64aab2dce234096
https://doi.org/10.14810/ijamse.2014.3401
https://doi.org/10.14810/ijamse.2014.3401