Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Turin, Valentin O."'
Autor:
Turin, Valentin O., Ilyushina, Yulia V., Andreev, Pavel A., Cherepkova, Anastasia Yu., Kireev, Daniil D., Nazritsky, Iliya V.
The paper considers a slightly modified one-dimensional infinite mass-in-mass chain. In the case of the long-wave approximation, which corresponds to the transition to a continuous medium, we obtained a system of two equations, which is a generalizat
Externí odkaz:
http://arxiv.org/abs/2401.12271
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenome
Externí odkaz:
http://arxiv.org/abs/1110.6319
Publikováno v:
Phys. Rev. B 69, 195310 (2004).
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance dependenc
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308218
Publikováno v:
Appl. Phys. Lett. 83, 2898 (2003).
We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arbitrary large quality factor Q of the RF-SET tank circuit. It is shown
Externí odkaz:
http://arxiv.org/abs/cond-mat/0305012
Autor:
Turin, Valentin O.
Publikováno v:
In Solid State Electronics 2005 49(10):1678-1682
Publikováno v:
Journal of Applied Physics; 9/1/2006, Vol. 100 Issue 5, p054501, 8p, 1 Diagram, 6 Graphs
Akademický článek
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Autor:
Zebrev, Gennady I., Vatuev, Alexander S., Useinov, Rustem G., Emeliyanov, Vladimir V., Anashin, Vasily S., Gorbunov, Maxim S., Turin, Valentin O.
Publikováno v:
2013 14th European Conference on Radiation & Its Effects on Components & Systems (RADECS); 2013, p1-6, 6p
Publikováno v:
2012 28th International Conference on Microelectronics Proceedings; 1/ 1/2012, p237-240, 4p
Publikováno v:
International Journal of High Speed Electronics & Systems. Mar2007, Vol. 17 Issue 1, p19-23. 5p. 1 Chart, 3 Graphs.