Zobrazeno 1 - 10
of 1 538
pro vyhledávání: '"Turchanin"'
Autor:
Kuppadakkath Athira, Najafidehaghani Emad, Gan Ziyang, Tuniz Alessandro, Ngo Gia Quyet, Knopf Heiko, Löchner Franz J. F., Abtahi Fatemeh, Bucher Tobias, Shradha Sai, Käsebier Thomas, Palomba Stefano, Felde Nadja, Paul Pallabi, Ullsperger Tobias, Schröder Sven, Szeghalmi Adriana, Pertsch Thomas, Staude Isabelle, Zeitner Uwe, George Antony, Turchanin Andrey, Eilenberger Falk
Publikováno v:
Nanophotonics, Vol 11, Iss 19, Pp 4397-4408 (2022)
We report for the first time the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photo
Externí odkaz:
https://doaj.org/article/e687295c18ea4723b5c68330a35235fb
Autor:
Borelli, Mino, An, Yun, Querebillo, Christine Joy, Morag, Ahiud, Neumann, Christof, Turchanin, Andrey, Sun, Hanjun, Kuc, Agnieszka, Weidinger, Inez M., Feng, Xinliang
Due to the drastic required thermodynamical requirements, a photoelectrode material that can function as both a photocathode and a photoanode remains elusive. In this work, we demonstrate for the first time that, under simulated solar light and witho
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A92768
https://tud.qucosa.de/api/qucosa%3A92768/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A92768/attachment/ATT-0/
Autor:
Sabaghi, Davood, Wang, Zhiyong, Bhauriyal, Preeti, Lu, Qiongqiong, Morag, Ahiud, Mikhailovia, Daria, Hashemi, Payam, Li, Dongqi, Neumann, Christof, Liao, Zhongquan, Dominic, Anna Maria, Shaygan Nia, Ali, Dong, Renhao, Zschech, Ehrenfried, Turchanin, Andrey, Heine, Thomas, Yu, Minghao, Feng, Xinliang
The anion-intercalation chemistries of graphite have the potential to construct batteries with promising energy and power breakthroughs. Here, we report the use of an ultrathin, positively charged two-dimensional poly(pyridinium salt) membrane (C2DP)
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A91559
https://tud.qucosa.de/api/qucosa%3A91559/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A91559/attachment/ATT-0/
Autor:
Ngo, Gia Quyet, Cholsuk, Chanaprom, Thiele, Sebastian, Gan, Ziyang, George, Antony, Pezoldt, Joerg, Turchanin, Andrey, Vogl, Tobias, Eilenberger, Falk
Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability to grow th
Externí odkaz:
http://arxiv.org/abs/2409.05693
Autor:
Bucher, Tobias, Fedorova, Zlata, Abasifard, Mostafa, Mupparapu, Rajeshkumar, Wurdack, Matthias J., Najafidehaghani, Emad, Gan, Ziyang, Knopf, Heiko, George, Antony, Eilenberger, Falk, Pertsch, Thomas, Turchanin, Andrey, Staude, Isabelle
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the poten
Externí odkaz:
http://arxiv.org/abs/2401.13372
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Autor:
Md. Anamul Hoque, Antony George, Vasudev Ramachandra, Emad Najafidehaghani, Ziyang Gan, Richa Mitra, Bing Zhao, Satyaprakash Sahoo, Maria Abrahamsson, Qiuhua Liang, Julia Wiktor, Andrey Turchanin, Sergey Kubatkin, Samuel Lara-Avila, Saroj P. Dash
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-7 (2024)
Abstract Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and co
Externí odkaz:
https://doaj.org/article/47132b75a0b34b9aad5964af34e3fc81
Autor:
Zheng, Zhikun, Zhang, Xianghui, Neumann, Christof, Emmrich, Daniel, Winter, Andreas, Vieker, Henning, Liu, Wei, Lensen, Marga, Gölzhäuser, Armin, Turchanin, Andrey
Publikováno v:
Nanoscale, Volume 7, (2015), Seiten 13393-13397, ISSN 2040-3364
van der Waals heterostructures meet other low-dimensional materials. Stacking of about 1 nm thick nanosheets with out-of-plane anchor groups functionalized with fullerenes integrates this zero-dimensional material into layered heterostructures with a
Externí odkaz:
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-188567
http://www.qucosa.de/fileadmin/data/qucosa/documents/18856/c5nr03475b.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/18856/c5nr03475b.pdf
Autor:
Rosati, Roberto, Paradisanos, Ioannis, Huang, Libai, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Lombez, Laurent, Renucci, Pierre, Turchanin, Andrey, Urbaszek, Bernhard, Malic, Ermin
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be c
Externí odkaz:
http://arxiv.org/abs/2302.02617
Autor:
Zahra Fekri, Phanish Chava, Gregor Hlawacek, Mahdi Ghorbani‐Asl, Silvan Kretschmer, Wajid Awan, Vivek Mootheri, Tommaso Venanzi, Natalia Sycheva, Antony George, Andrey Turchanin, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Arkady V. Krasheninnikov, Artur Erbe
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV a
Externí odkaz:
https://doaj.org/article/e08136aa34fc4c69b664e9743e4bb96d