Zobrazeno 1 - 1
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pro vyhledávání: '"Turayev A.R."'
Publikováno v:
E3S Web of Conferences, Vol 458, p 01008 (2023)
The analysis of investigations carried out on studying influence of all-around pressure to Schottky diodes based on n-Si construction characteristics has been presented. It has been revealed that before the pressure influence the diodes capacitance i
Externí odkaz:
https://doaj.org/article/abeb26cb7c20466094014bb5f18fb1fc
