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Akademický článek

Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility

Autor: Takanori Shirokura, Tuo Fan, Nguyen Huynh Duy Khang, Tsuyoshi Kondo, Pham Nam Hai

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)

Abstract Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θ SH > 1) is limited to a few chalcogenide

Externí odkaz: https://doaj.org/article/221bc2c6e58348c39ab70c7eac609c61

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Akademický článek

Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers

Autor: Tuo Fan, Nguyen Huynh Duy Khang, Soichiro Nakano, Pham Nam Hai

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)

Abstract Spin orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high performa

Externí odkaz: https://doaj.org/article/2f516760a89a4ba38374e82c02b3cb8f

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Akademický článek

Zero-field topological Hall effect as evidence of ground-state skyrmions at room temperature in BiSb/MnGa bilayers

Autor: Nguyen Huynh Duy Khang, Tuo Fan, Pham Nam Hai

Publikováno v: AIP Advances, Vol 9, Iss 12, Pp 125309-125309-6 (2019)

We observe the signature of zero-field ground-state skyrmions in BiSb topological insulator/MnGa bilayers by using the topological Hall effect (THE). We observe a large critical interfacial Dzyaloshinskii-Moriya-Interaction (DMI) energy (DCS = 5.0 pJ

Externí odkaz: https://doaj.org/article/507f60e52ace4841a4633598b27f0e14

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