Zobrazeno 1 - 10
of 14 424
pro vyhledávání: '"Tunnel junction"'
Publikováno v:
Journal of Information Display, Pp 1-7 (2024)
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass grea
Externí odkaz:
https://doaj.org/article/bd89fba2d366436dabdd16e13b8216c8
Autor:
Mohammad Javad Adel, Mohammad Hadi Rezayati, Mohammad Hossein Moaiyeri, Abdolah Amirany, Kian Jafari
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024)
Abstract The ubiquitous presence of electronic devices demands robust hardware security mechanisms to safeguard sensitive information from threats. This paper presents a physical unclonable function (PUF) circuit based on magnetoresistive random acce
Externí odkaz:
https://doaj.org/article/9f225083f21d4d969a8397123b8590b3
Publikováno v:
Journal of Information Display, Pp 1-6 (2024)
The effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentra
Externí odkaz:
https://doaj.org/article/402ab14b16554da7b79976207075bfc9
Autor:
Lucci, M.1, Cassi, D.2, Merlo, V.1, Russo, R.3, Salina, G.4, Cirillo, M.1 cirillo@roma2.infn.it
Publikováno v:
Scientific Reports. 6/23/2020, Vol. 10 Issue 1, p1-8. 8p.
Publikováno v:
Scientific Reports. 12/31/2019, Vol. 9 Issue 1, p1-8. 8p.
Publikováno v:
Quantum Frontiers, Vol 3, Iss 1, Pp 1-26 (2024)
Abstract The superconducting tunneling effect in heterostructures, describing the process where single electrons or Cooper pairs tunnel through the barrier, can always play a significant role in understanding the phase coherence and pairing mechanism
Externí odkaz:
https://doaj.org/article/3b2ab856401240c1be6fd222f768b8ef
Autor:
Ponce, F.1,2, Swanberg, E. L.1, Burke, J. T.1, Faye, S. A.1, Friedrich, S.1 friedrich1@llnl.gov
Publikováno v:
Journal of Low Temperature Physics. Dec2018, Vol. 193 Issue 5/6, p1214-1221. 8p.
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
AbstractHybrid magnetic tunnel junction (MTJ)/CMOS circuits based on the computation-in-memory (CIM) architecture are contemplated as the future generation of digital integrated circuits. It overcomes the limitations of von-Neumann architecture by of
Externí odkaz:
https://doaj.org/article/9579303eb2f948d3a353a3404d3abbb3
Autor:
Haiyang Pan, Anil Kumar Singh, Chusheng Zhang, Xueqi Hu, Jiayu Shi, Liheng An, Naizhou Wang, Ruihuan Duan, Zheng Liu, Stuart S. P. Parkin, Pritam Deb, Weibo Gao
Publikováno v:
InfoMat, Vol 6, Iss 6, Pp n/a-n/a (2024)
Abstract The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean
Externí odkaz:
https://doaj.org/article/a855274e373f4556a49019d36ff3e788
Autor:
Rasmiah S. Almufarij, M. Jamil, Emaan Alsubhe, S.M. Alghamdi, Elsammani Ali Shokralla, Khushi Muhammad Khan, Arslan Ashfaq, Adnan Ali, Syed Asfar Ahmad Jafri, Mohd Shakir Khan
Publikováno v:
Chemical Physics Impact, Vol 8, Iss , Pp 100562- (2024)
A tandem structure efficiently boosts solar cell efficiency because it uses a larger spectrum of solar radiation and minimizes photon energy thermalization. High-performance tandem solar cells have historically been difficult to produce due to a shor
Externí odkaz:
https://doaj.org/article/d1930b42048c45ea98520dd830012a4c