Zobrazeno 1 - 10
of 2 116
pro vyhledávání: '"Tunnel field-effect transistor"'
Autor:
Jyi-Tsong Lin, Wei-Heng Tai
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-20 (2024)
Abstract In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel. The overlapping gate and source contact regio
Externí odkaz:
https://doaj.org/article/cba3c7112606408cbc1aad648e6e763a
Autor:
Jyi-Tsong Lin, Chia-Yo Kuo
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-16 (2024)
Abstract Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nan
Externí odkaz:
https://doaj.org/article/ca4285b817004358a4840b5846b41cd2
Autor:
Zahra Ahangari
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 11-19 (2024)
In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance. In this device, the source contains germanium, while the channel and drain
Externí odkaz:
https://doaj.org/article/eacf52f5fcc54313864e48492aec76b7
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 713-718 (2024)
In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated i
Externí odkaz:
https://doaj.org/article/7f35bd15b6fa4ce19268b862a8ddd0c8
Autor:
Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 948-955 (2024)
A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated. Foremost, the correctness of the dual modulation
Externí odkaz:
https://doaj.org/article/1d9adcd9dfc04d16848f5e967acd1d2d
Publikováno v:
Nanomaterials, Vol 14, Iss 15, p 1307 (2024)
In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four
Externí odkaz:
https://doaj.org/article/bd4c352f270d4308b34e2d070a96cf63
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Vobulapuram, Ramesh Kumar, Shaik, Javid Basha, P., Venkatramana, Mekala, Durga Prasad, Lingayath, Ujwala
Publikováno v:
Circuit World, 2021, Vol. 49, Issue 2, pp. 174-179.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-05-2020-0079
Publikováno v:
IEEE Access, Vol 11, Pp 30546-30554 (2023)
The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using a TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and
Externí odkaz:
https://doaj.org/article/bb890980a718458bab3b7dfbad0169d3
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.